参数资料
型号: MBT3906DW1T3
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: SC-88, 6 PIN
文件页数: 16/16页
文件大小: 327K
代理商: MBT3906DW1T3
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
http://onsemi.com
9
MBT3906DW1T1 (PNP)
TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
Figure 25.
f, FREQUENCY (kHz)
2.0
3.0
4.0
5.0
1.0
0.1
Figure 26.
Rg, SOURCE RESISTANCE (k OHMS)
0
N
F,
N
OI
S
E
FIGU
R
E
(
dB
)
1.0
2.0
4.0
10
20
40
0.2
0.4
0
100
4
6
8
10
12
2
0.1
1.0
2.0
4.0
10
20
40
0.2
0.4
100
NF
,NOISE
FIGURE
(dB)
f = 1.0 kHz
IC = 1.0 mA
IC = 0.5 mA
IC = 50 mA
IC = 100 mA
SOURCE RESISTANCE = 200
W
IC = 1.0 mA
SOURCE RESISTANCE = 200
W
IC = 0.5 mA
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
MBT3906DW1T1 (PNP)
h PARAMETERS
(VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C)
Figure 27. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 28. Output Admittance
IC, COLLECTOR CURRENT (mA)
h
,D
C
U
RR
E
N
T
GAI
N
h
,OUTPUT
ADMITT
ANCE
(
mhos)
Figure 29. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 30. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
50
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1
0.2
1.0
2.0
5.0
0.5
10
0.3
0.5
3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h
,I
NP
UT
IM
P
EDA
NC
E
(k
OHM
S)
ie
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
7
5
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
fe
m
70
30
0.7
7.0
0.7
7.0
3.0
0.7
0.3
0.7
7.0
0.7
7.0
h
,
VOL
T
AGE
FEEDBACK
RA
TIO
(x
10
)
re
–4
MBT3906DW1T1 (PNP)
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