参数资料
型号: MC13851EPR2
厂商: Freescale Semiconductor
文件页数: 2/34页
文件大小: 0K
描述: IC RF LNA 1GHZ-2.5GHZ 8 MLPD
标准包装: 1
频率: 1GHz ~ 2.5GHz
P1dB: 8dBm
增益: 16.4dB
噪音数据: 1.1dB
RF 型: 通用
电源电压: 2.3 V ~ 3 V
电流 - 电源: 4.8mA
测试频率: 2.14GHz
封装/外壳: 8-WFDFN 裸露焊盘
包装: 标准包装
其它名称: MC13851EPR2DKR
Introduction
1.1
Features
The MC13851 is intended for applications from 1000 MHz to 2500 MHz and the MC13852 is for
applications less than 1000 MHz.
? Gain: 18.7 dB (typical) at 1960 MHz and 17.7 dB (typical) at 2140 MHz
? Output third order intercept point (OIP3): 16 dBm at 1960 MHz and 17 dBm (typical) dBm at
2140 MHz
? Noise Figure (NF): 1.37 dB (typical) at 1960 MHz and 1.46 dB at 2140 MHz
? Output 1 dB compression point (P1dB): 8 dBm (typical) at 1960 MHz and 8 dBm (typical) at
2140 MHz
? IP3 Boost Circuitry from Freescale
? Bypass mode has return losses comparable to active mode, for use in systems with filters and
duplexers
? Bypass mode improves dynamic range in variable signal strength environments
? Integrated logic-controlled standby mode with current drain < 1uA
? Total supply current variable from 2.5 mA–5 mA using an external bias resistor
? In a receiver system with 20% active mode and 80% bypass mode, the average current drain is < 0.6
mA
? On-chip bias sets the bias point
? Bias stabilized for device and temperature variations
? MLPD-8 leadless package with low parasitics
? 1575 MHz, 1960 MHz, 2140 MHz and 2500 MHz application circuit evaluation boards with
characterization data are available
? Available in tape and reel packaging
1.2
Applications
Ideal for use in any RF product that operates between 1000 MHz and 2.5 GHz, and may be applied in:
? Buffer amplifiers
? Mixers
? IF amplifiers
? Voltage controlled oscillators (VCOs)
? Use with transceivers requiring external LNAs
? Smart metering
? Mobile—Cellular front end LNA, GPS, two-way radios
? Consumer—WLAN, 802.11 b/g
? Auto—GPS, active antenna, wireless security
? Low current drain/long standby time for extended battery life applications
MC13851 Advance Information, Rev. 2.0
2
Freescale Semiconductor
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