参数资料
型号: MC13851EPR2
厂商: Freescale Semiconductor
文件页数: 9/34页
文件大小: 0K
描述: IC RF LNA 1GHZ-2.5GHZ 8 MLPD
标准包装: 1
频率: 1GHz ~ 2.5GHz
P1dB: 8dBm
增益: 16.4dB
噪音数据: 1.1dB
RF 型: 通用
电源电压: 2.3 V ~ 3 V
电流 - 电源: 4.8mA
测试频率: 2.14GHz
封装/外壳: 8-WFDFN 裸露焊盘
包装: 标准包装
其它名称: MC13851EPR2DKR
Application Information
Figure 6 shows the Icc current drain for a range of values for the external bias resistor Rbias.
5
4.5
y ? = ? 1.5497x 2 ‐ 7.6446x ? + ? 11.822
4
R2 ? = ? 0.981
3.5
Icc ? mA
3
2.5
2
Poly. ? (Icc ? mA)
1.1
1.3
1.5
1.7
1.9
2.1
Rbias ? value ? (kohm)
Figure 6. Icc vs. Bias Resistor R1 Value
3
Application Information
The MC13851 LNA is designed for applications in the 1000 MHz to 2.5 GHz range. It has three different
modes: High Gain, Low Gain (bypass) and standby. The LNA is programmable through the Gain and
Enable pins. The logic truth table is given in Table 3 . The internal bypass switch is designed for broadband
applications. One of the advantages of the MC13851 is the simplification of the matching network in both
bypass and amplifier modes. The bypass switch is designed so that changes of input and output return
losses between bypass mode and active mode are minimized and the matching network design is
simplified. In these application examples a balance is made between the competing RF performance
characteristics of Icc, NF, gain, IP3 and return losses with unconditional stability. Conjugate matching is
not used for the input or output. Instead, matching which achieves a trade-off in RF performance qualities
is used. For a particular application or specification requirement, the matching can be changed to achieve
enhanced performance of one parameter. Measurements are made at a bias of Vcc=2.75 V. Frequency
spacing for IP3 measurements is 200 kHz. Non-linear measurements are made at Pin = -30 dBm. Typical
application circuits are provided for 1575 MHz, 1960 MHz, 2140 MHz and 2.4 GHz applications. Typical
RF performance is shown for two values of bias resistor R1: 1.2 k Ω and 1.5 k Ω . These two current drain
levels offer variations in intercept point, gain and noise figure. Included with each application are the
schematics and electrical performance. Section 4, “Printed Circuit and Bill of Materials ” provides the
evaluation board layout and Bill of Material for the circuits. Section 5, “Scattering and Noise Parameters ”
provides Smith charts with gain and noise circles for each application frequency.
3.1
1575 MHz Application
This application was designed to provide typical NF = 1.28 dB, S21 gain = 19 dB, OIP3 =14.5 dBm with
return losses better than -10 dB at 1575 MHz. Typical performance that can be expected from this circuit
at 2.75V is listed in Table 6 . The component values can be changed to enhance the performance of a
particular parameter, but usually at the expense of another. Two values of bias resistor R1 are shown to
MC13851 Advance Information, Rev. 2.0
Freescale Semiconductor
9
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