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参数资料
| 型号： | MC13851EPR2 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 5/34页 |
| 文件大小： | 0K |
| 描述： | IC RF LNA 1GHZ-2.5GHZ 8 MLPD |
| 标准包装： | 1 |
| 频率： | 1GHz ~ 2.5GHz |
| P1dB： | 8dBm |
| 增益： | 16.4dB |
| 噪音数据： | 1.1dB |
| RF 型： | 通用 |
| 电源电压： | 2.3 V ~ 3 V |
| 电流 - 电源： | 4.8mA |
| 测试频率： | 2.14GHz |
| 封装/外壳： | 8-WFDFN 裸露焊盘 |
| 包装： | 标准包装 |
| 其它名称： | MC13851EPR2DKR |
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Electrical Specifications
Table 4. Electrical Characteristics (Vcc = 2.75 V, Ta = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Associated Gain at Minimum Noise Figure
R1=1.2 k Ω , Freq=1.575 GHz
20.5
22
—
R1=1.2 k Ω , Freq=2.14 GHz
R1=1.5 k Ω , Freq=1.575 GHz
R1=1.5 k Ω , Freq=2.14 GHz
Gnf
17
20.5
17.5
18.6
22
19
—
—
—
dB
Icc and RF Turn On Time
Enable trigger total time of 1.8 μ second from 0 to 2.75 V
Icc rise time from 0 to 76% of final current level
Icc rise time from 0 to 87% of final current level
RF on time from leading edge of enable trigger to RF turn-on
—
—
—
6.4
9.6
1.37
—
—
—
μ s
Note:
Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows:
MAG = |S21/S12(K ± sqrt(K2-1)) |, if K>1, MSG = |S21/S12|, if K<1
Table 5 lists the electrical characteristics measured on evaluation boards tuned for typical application
frequencies when Rbias is 1.2 k Ω . Further details on the application circuits are shown in Section 3,
“Application Information ”
Table 5. Electrical Characteristics Measured in Frequency Specific Tuned Circuits
(Vcc = 2.75V, TA = 25°C, Rbias =1.2k Ω unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
1575 MHz (Refer to Figure 7 )
Frequency
Active RF Gain
Active Noise Figure
Active Input Third Order Intercept Point
Active Input 1dB Compression Point
Active Current @ 2.75V, Rbias=1.2k Ω
Active Current @ 2.75V, Rbias=1.5k Ω
Active Gain
Bypass RF Gain
Bypass Noise Figure
Bypass Input Third Order Intercept Point
Bypass Current
Bypass Gain
f
G
NF
IIP3
P1dBoutput
Icc
Icc
S21
G
NF
IIP3
—
S21
—
18.4
—
-6.5
6.3
—
—
18
-6.5
—
24
—
-7
1575
19.4
1.28
-5
7.4
4.8
3.8
19
-5.5
6
25.5
4
-5.5
—
—
1.6
—
—
5.8
4.8
—
—
7
—
20
—
MHz
dB
dB
dBm
dBm
mA
mA
dB
dB
dB
dBm
μ A
dB
1960 MHz (Refer to Figure 8 )
Frequency
Active RF Gain
Active Noise Figure
Active Input Third Order Intercept Point
Active Input 1dB Compression Point
f
G
NF
IIP3
P1dBoutput
—
17.7
—
-4
6
1960
18.7
1.37
-2.7
8
—
—
1.65
—
—
MHz
dB
dB
dBm
dBm
MC13851 Advance Information, Rev. 2.0
Freescale Semiconductor
5
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