参数资料
型号: MC9328MX1DVM20
厂商: Freescale Semiconductor
文件页数: 16/100页
文件大小: 0K
描述: IC MCU I.MX 200MHZ 256-MAPBGA
标准包装: 152
系列: i.MX1
核心处理器: ARM9
芯体尺寸: 32-位
速度: 200MHz
连通性: EBI/EMI,I²C,MMC,智能卡,SPI,SSI,UART/USART,USB
外围设备: DMA,I²S,LCD,POR,PWM,WDT
输入/输出数: 110
程序存储器类型: ROMless
电压 - 电源 (Vcc/Vdd): 1.7 V ~ 3.3 V
振荡器型: 外部
工作温度: -30°C ~ 70°C
封装/外壳: 256-MAPBGA
包装: 托盘
Electrical Characteristics
MC9328MX1 Technical Data, Rev. 7
22
Freescale Semiconductor
3
Electrical Characteristics
This section contains the electrical specifications and timing diagrams for the i.MX1 processor.
3.1
Maximum Ratings
Table 4 provides information on maximum ratings which are those values beyond which damage to the
device may occur. Functional operation should be restricted to the limits listed in Recommended Operating
Range Table 5 on page 23 or the DC Characteristics table.
3.2
Recommended Operating Range
Table 5 provides the recommended operating ranges for the supply voltages and temperatures. The i.MX1
processor has multiple pairs of VDD and VSS power supply and return pins. QVDD and QVSS pins are
used for internal logic. All other VDD and VSS pins are for the I/O pads voltage supply, and each pair of
VDD and VSS provides power to the enclosed I/O pads. This design allows different peripheral supply
voltage levels in a system.
Because AVDD pins are supply voltages to the analog pads, it is recommended to isolate and noise-filter
the AVDD pins from other VDD pins.
BTRFVDD is the supply voltage for the Bluetooth interface signals. It is quite sensitive to the data
transmit/receive accuracy. Please refer to Bluetooth RF spec for special handling. If Bluetooth is not used
Table 4. Maximum Ratings
Symbol
Rating
Minimum
Maximum
Unit
NVDD
DC I/O Supply Voltage
-0.3
3.3
V
QVDD
DC Internal (core = 150 MHz) Supply Voltage
-0.3
1.9
V
QVDD
DC Internal (core = 200 MHz) Supply Voltage
-0.3
2.0
V
AVDD
DC Analog Supply Voltage
-0.3
3.3
V
BTRFVDD
DC Bluetooth Supply Voltage
-0.3
3.3
V
VESD_HBM
ESD immunity with HBM (human body model)
2000
V
VESD_MM
ESD immunity with MM (machine model)
100
V
ILatchup
Latch-up immunity
200
mA
Test
Storage temperature
-55
150
°C
Pmax
Power Consumption
8001
1 A typical application with 30 pads simultaneously switching assumes the GPIO toggling and instruction fetches from the ARM
core-that is, 7x GPIO, 15x Data bus, and 8x Address bus.
13002
2 A worst-case application with 70 pads simultaneously switching assumes the GPIO toggling and instruction fetches from the
ARM core-that is, 32x GPIO, 30x Data bus, 8x Address bus. These calculations are based on the core running its heaviest OS
application at MHz, and where the whole image is running out of SDRAM. QVDD at V, NVDD and AVDD at 3.3V, therefore,
180mA is the worst measurement recorded in the factory environment, max 5mA is consumed for OSC pads, with each toggle
GPIO consuming 4mA.
mW
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