参数资料
型号: MC9RS08KA2CDB
厂商: Freescale Semiconductor
文件页数: 15/136页
文件大小: 0K
描述: IC MCU 8-BIT 2K FLASH 6-DFN
产品培训模块: Mechatronics
USBSpyder08 Discovery Kit
RS08KA2 Low-End Microcontroller Series
MC9RS08KA8 Microcontroller
标准包装: 490
系列: RS08
核心处理器: RS08
芯体尺寸: 8-位
速度: 10MHz
外围设备: LVD,POR,WDT
输入/输出数: 2
程序存储器容量: 2KB(2K x 8)
程序存储器类型: 闪存
RAM 容量: 63 x 8
电压 - 电源 (Vcc/Vdd): 1.8 V ~ 5.5 V
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 6-VDFN 裸露焊盘
包装: 托盘
产品目录页面: 726 (CN2011-ZH PDF)
配用: DEMO9RS08KA2-ND - DEMO BOARD FOR 9RS08KA2
Appendix A Electrical Characteristics
MC9RS08KA2 Series Data Sheet, Rev. 4
Freescale Semiconductor
111
PD = K ÷ (TJ + 273°C)
Eqn. A-2
Solving Equation A-1 and Equation A-2 for K gives:
K = PD × (TA + 273°C) + θJA × (PD)
2
Eqn. A-3
where K is a constant pertaining to the particular part. K can be determined from Equation A-3 by
measuring PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be
obtained by solving equations 1 and 2 iteratively for any value of TA.
A.4
Electrostatic Discharge (ESD) Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. All ESD testing is in conformity with CDF-AEC-Q00 Stress
Test Qualification for Automotive Grade Integrated Circuits. (http://www.aecouncil.com/) A device is
considered to have failed if, after exposure to ESD pulses, the device no longer meets the device
specification requirements. Complete dc parametric and functional testing is performed per the applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the
device specification.
A.5
DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Table A-3. ESD Protection Characteristics
Parameter
Symbol
Value
Unit
ESD Target for Machine Model (MM)
MM circuit description
VTHMM
200
V
ESD Target for Human Body Model (HBM)
HBM circuit description
VTHHBM
2000
V
Table A-4. DC Characteristics
(Temperature Range = –40 to 85
°C Ambient)
Parameter
Symbol
Min
Typical
Max
Unit
Supply voltage (run, wait and stop modes.)
0 < fBus <10MHz
VDD
1.8
5.5
V
Minimum RAM retention supply voltage applied to VDD
VRAM
0.8 1
——
V
Low-voltage Detection threshold
(VDD falling)
(VDD rising)
VLVD
1.80
1.88
1.86
1.94
1.95
2.03
V
Power on RESET (POR) voltage
VPOR
0.9
1.4
1.7
V
Input high voltage (VDD > 2.3V) (all digital inputs)
VIH
0.70
× V
DD
——
V
Input high voltage (1.8 V
≤ V
DD ≤ 2.3 V) (all digital inputs)
VIH
0.85
× V
DD
——
V
相关PDF资料
PDF描述
RE46C107S16F IC HORN DRIVER DUAL 16SOIC
RE46C117E8F IC HORN DRIVER DUAL 8PDIP
MC9S08SF4MTJ MCU 8BIT 4K FLASH 20-TSSOP
MC9S08QE4CWJ IC MCU 8BIT 4K FLASH 20-SOIC
MC9S08SH4CWJ MCU 8BIT 4K FLASH 20-SOIC
相关代理商/技术参数
参数描述
MC9RS08KA2CPC 功能描述:8位微控制器 -MCU 2K FLASH W/ ACMP 62 RAM RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
MC9RS08KA2CSC 功能描述:8位微控制器 -MCU 2K FLASH W/ ACMP 62 RAM RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
MC9RS08KA2CSCR 功能描述:8位微控制器 -MCU 2K FLASH W/ ACMP 62 RAM RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
MC9RS08KA2DB 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Microcontrollers
MC9RS08KA2PC 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Microcontrollers