参数资料
型号: MCF5274LCVM166
厂商: Freescale Semiconductor
文件页数: 13/44页
文件大小: 0K
描述: IC MCU 32BIT 166MHZ 196-MAPBGA
标准包装: 126
系列: MCF527x
核心处理器: Coldfire V2
芯体尺寸: 32-位
速度: 166MHz
连通性: EBI/EMI,以太网,I²C,SPI,UART/USART,USB
外围设备: DMA,WDT
输入/输出数: 69
程序存储器类型: ROMless
RAM 容量: 64K x 8
电压 - 电源 (Vcc/Vdd): 1.4 V ~ 1.6 V
振荡器型: 外部
工作温度: -40°C ~ 85°C
封装/外壳: 196-LBGA
包装: 托盘
MCF5275 Integrated Microprocessor Family Hardware Specification, Rev. 4
Electrical Characteristics
Freescale Semiconductor
20
8.3
ESD Protection
PINT
= IDD × VDD, Watts - Chip Internal Power
PI/O
= Power Dissipation on Input and Output Pins — User Determined
For most applications PI/O < PINT and can be ignored. An approximate relationship between PD and TJ (if PI/O is
neglected) is:
(2)
Solving equations 1 and 2 for K gives:
K = PD × (TA + 273 °C) + ΘJMA × PD
2 (3)
where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring PD (at
equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving equations (1)
and (2) iteratively for any value of TA.
Table 9. ESD Protection Characteristics1, 2
1
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive
Grade Integrated Circuits.
2
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the
device specification requirements. Complete DC parametric and functional testing is
performed per applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Characteristics
Symbol
Value
Units
ESD Target for Human Body Model
HBM
2000
V
ESD Target for Machine Model
MM
200
V
HBM Circuit Description
Rseries
1500
Ω
C
100
pF
MM Circuit Description
Rseries
0
Ω
C
200
pF
Number of pulses per pin (HBM)
positive pulses
negative pulses
1
Number of pulses per pin (MM)
positive pulses
negative pulses
3
Interval of Pulses
1
sec
PD
KTJ 273°C
+
()
÷
=
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