参数资料
型号: MCH6436-TL-E
厂商: ON Semiconductor
文件页数: 4/7页
文件大小: 0K
描述: MOSFET N-CH 30V 6A MCPH6
标准包装: 3,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 6A
开态Rds(最大)@ Id, Vgs @ 25° C: 34 毫欧 @ 3A,4.5V
闸电荷(Qg) @ Vgs: 7.5nC @ 4.5V
输入电容 (Ciss) @ Vds: 710pF @ 10V
功率 - 最大: 1.5W
安装类型: 表面贴装
封装/外壳: 6-SMD,扁平引线
供应商设备封装: 6-MCPH
包装: 带卷 (TR)
MCH6436
0 μ
1m
ms
0m
ati
a=
25
° C
5
4
3
2
VDS=10V
ID=6A
VGS -- Qg
5
3
2
10
7
5
3
2
1.0
7
5
3
2
ASO
IDP=24A
ID=6A
DC
op
Operation in this area
is limited by RDS(on).
er
10
on
10
s
(T
PW≤10μs
10
s
s
)
1
0.1
7
5
Ta=25 ° C
(1500mm 2 × 0.8mm)
0.01
0
0
1
2
3
4
5
6
7
8
0.01
3 Single pulse
2 When mounted on ceramic substrate
2 3 5 7 0.1 2 3 5 7 1.0 2 3
5 7 10
2 3
5
1.8
1.6
Total Gate Charge, Qg -- nC IT15070
PD -- Ta
When mounted on ceramic substrate
(1500mm 2 × 0.8mm)
Drain-to-Source Voltage, VDS -- V
IT15071
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- ° C
IT15072
No. A1565-4/7
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