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参数资料
| 型号： | MCH6602-TL-E |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V 350MA MCPH6 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 350mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.7 欧姆 @ 80mA，4V |
| 闸电荷(Qg) @ Vgs： | 1.58nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 7pF @ 10V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-SMD，无引线 |
| 供应商设备封装： | 6-MCPH |
| 包装： | 带卷 (TR) |
Ordering number : EN6445D
MCH6602
N-Channel Power MOSFET
30V, 0.35A, 3.7 Ω , Dual MCPH6
Features
http://onsemi.com
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?
?
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Low ON-resistance
Ultrahigh-speed switching
1.5V drive
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
30
±10
0.35
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm) 1unit
1.4
0.8
150
--55 to +150
A
W
°C
°C
This product is designed to “ESD immunity < 200V * ”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7022A-006
Product & Package Information
? Package : MCPH6
? JEITA, JEDEC : SC-88, SC-70-6, SOT-363
? Minimum Packing Quantity : 3,000 pcs./reel
6
2.0
5
4
0.15
MCH6602-TL-E
Packing Type : TL
Marking
0 to 0.02
FB
1
0.65
2
3
0.3
TL
Electrical Connection
1 : Source1
6
5
4
2 : Gate1
1
2
3
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
6
5
4
MCPH6
1
2
3
Semiconductor Components Industries, LLC, 2013
August, 2013
82813 TKIM TC-00002986/71112 TKIM/12407 TIIM TC-00000415/70306/ No.6445-1/6
42806PE MSIM TB-00002288/30300 TS (KOTO) TA-2509
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6603 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| MCH6603_06 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6603_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6603-TL-H | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH6604 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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