参数资料
型号: MCH6626
厂商: SANYO SEMICONDUCTOR CO LTD
元件分类: 小信号晶体管
英文描述: 1600 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MCPH6, 6 PIN
文件页数: 5/6页
文件大小: 47K
代理商: MCH6626
MCH6626
No.7918-5/6
0
20
40
60
100
120
140
0
80
1.0
0.4
0.2
0.6
0.8
160
IT02521
[Pch, Nch]
Ambient Tamperature, Ta --
°C
PD -- Ta
Allo
w
able
Po
wer
Dissipation,
P
D
-
W
Mounted
on
a
ceramic
board(900mm
2!
0.8mm)1unit
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS=10V
ID=1.6A
IT03307
2
3
5
7
2
3
5
7
2
3
5
7
10
1.0
0.1
0.01
1.0
23
5
7
23
5
7
10
0.1
23
IT03308
IDP=6.4A
ID=1.6A
Operation in this
area is limited by RDS(on).
100
s
100ms
DC
operation
1ms
10ms
<10
s
VGS -- Qg
A S O
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
--
V
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
Ta=25
°C
Single pulse
Mounted on a ceramic board(900mm2!0.8mm)1unit
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
VGS -- Qg
VDS= --10V
ID= --1A
IT03376
A S O
2
3
5
7
2
3
5
7
2
3
5
7
--10
--1.0
--0.1
--0.01
--1.0
23
5
7
23
5
7
--10
--0.1
23
IT03377
IDP= --4.0A
ID= --1.0A
Operation in this
area is limited by RDS(on).
100ms
DC
operation
1ms
10ms
<10
s
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
--
V
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
Ta=25
°C
Single pulse
Mounted on a ceramic board(900mm2!0.8mm)1unit
相关PDF资料
PDF描述
MCH6626 1600 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6627 1400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6627 1400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6628 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6629 400 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
相关代理商/技术参数
参数描述
MCH6626-TL-E 功能描述:MOSFET N/P-CH 20V 1.6/1A MCPH6 RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道(双) FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds(最大)@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A,10V Id 时的 Vgs(th)(最大):3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR
MCH6627 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications
MCH6627-TL-E 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82
MCH6628 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
MCH6628-TL-E 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82