参数资料
型号: MCIMX351AVM4BR2
厂商: Freescale Semiconductor
文件页数: 35/147页
文件大小: 0K
描述: IC MPU I.MX35 400MAPBGA
标准包装: 1,000
系列: i.MX35
核心处理器: ARM11
芯体尺寸: 32-位
速度: 400MHz
连通性: 1 线,CAN,EBI/EMI,以太网,I²C,MMC,SPI,SSI,UART/USART,USB OTG
外围设备: DMA,I²S,LCD,POR,PWM,WDT
输入/输出数: 96
程序存储器类型: ROMless
RAM 容量: 128K x 8
电压 - 电源 (Vcc/Vdd): 1.22 V ~ 1.47 V
振荡器型: 外部
工作温度: -40°C ~ 85°C
封装/外壳: 400-LFBGA
包装: 带卷 (TR)
i.MX35 Applications Processors for Automotive Products, Rev. 10
Freescale Semiconductor
13
4
Electrical Characteristics
The following sections provide the device-level and module-level electrical characteristics for the i.MX35
processor.
4.1
i.MX35 Chip-Level Conditions
This section provides the device-level electrical characteristics for the IC. See Table 6 for a quick reference
to the individual tables and sections.
CAUTION
Stresses beyond those listed in Table 7 may cause permanent damage to the
device. These are stress ratings only. Functional operation of the device at
these or any other conditions beyond those indicated in Table 8 is not
implied. Exposure to absolute-maximum-rated conditions for extended
periods may affect device reliability.
Table 6. i.MX35 Chip-Level Conditions
Characteristics
Table/Location
Table 7. Absolute Maximum Ratings
Parameter
Symbol
Min.
Max.
Units
Supply voltage (core)
VDDmax
1
1 VDD is also known as QVCC.
–0.5
1.47
V
Supply voltage (I/O)
NVCCmax
–0.5
3.6
V
Input voltage range
VImax
–0.5
3.6
V
Storage temperature
Tstorage
–40
125
oC
ESD damage immunity:
Vesd
V
Human Body Model (HBM)
20002
2 HBM ESD classification level according to the AEC-Q100-002 standard
Charge Device Model (CDM)
5003
3 Corner pins max. 750 V
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