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| 型号： | MCP14700-E/SN |
| 厂商： | Microchip Technology |
| 文件页数： | 14/26页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER HIGH/LOW 8SOIC |
| 标准包装： | 100 |
| 配置： | 高端和低端，同步 |
| 输入类型： | 非反相 |
| 延迟时间： | 27ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 管件 |
| 产品目录页面： | 670 (CN2011-ZH PDF) |
MCP14700
5.4
PCB Layout
Figure 5-2 depicts the current flow paths when the
Proper PCB layout is important in a high current, fast
switching circuit to provide proper device operation.
Improper component placement may cause errant
switching, excessive voltage ringing, or circuit latch-up.
There are two important states of the MCP14700
outputs of the MCP14700 are low and the power
MOSFETs are turned off. These current paths should
also have low inductance and a small loop area to
minimize the voltage ringing and spiking.
outputs, high and low. Figure 5-1 depicts the current
flow paths when the outputs of the MCP14700 are high
and the power MOSFETs are turned on. The charge
needed to turn on the low-side power MOSFET comes
from the decoupling capacitor C VCC . The current flows
from this capacitor through the internal LOWDR
circuitry, into the gate of the low-side power MOSFET,
out the source, into the ground plane, and back to
C VCC . To reduce any excess voltage ringing or spiking,
the inductance and area of this current loop must be
PWM HI
PWM LO
V CC
C BOOT
MCP14700
V SUPPLY
minimized.
C VCC
C BOOT
MCP14700
V SUPPLY
PWM HI
FIGURE 5-2:
Turn Off Current Paths.
PWM LO
V CC
C VCC
The following recommendations should be followed for
optimal circuit performance:
- The components that construct the high
current paths previously mentioned should be
placed close the MCP14700 device. The
traces used to construct these current loops
should be wide and short to keep the
inductance and impedance low.
- A ground plane should be used to keep both
the parasitic inductance and impedance
minimized. The MCP14700 device is capable
FIGURE 5-1:
Turn On Current Paths.
of sourcing and sinking high peaks current
and any extra parasitic inductance or
The charge needed to turn on the high-side power
MOSFET comes from the bootstrap capacitor C BOOT .
Current flows from C BOOT through the internal
HIGHDR circuitry, into the gate of the high-side power
MOSFET, out the source and back to C BOOT . The
printed circuit board traces that construct this current
loop need to have a small area and low inductance. To
control the inductance, short and wide traces must be
used.
DS22201A-page 14
impedance will result in non-optimal
performance.
? 2009 Microchip Technology Inc.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCP14700T | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:Dual Input Synchronous MOSFET Driver |
| MCP14700T-E/MF | 功能描述:功率驱动器IC 4A Hi-Side MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MCP14700T-E/SN | 功能描述:功率驱动器IC 4A Hi-Side MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MCP14E10 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:3.0A Dual High-Speed Power MOSFET Driver With Enable |
| MCP14E10-E/MF | 功能描述:功率驱动器IC 2A MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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