参数资料
型号: MCP14700-E/SN
厂商: Microchip Technology
文件页数: 7/26页
文件大小: 0K
描述: IC MOSFET DRIVER HIGH/LOW 8SOIC
标准包装: 100
配置: 高端和低端,同步
输入类型: 非反相
延迟时间: 27ns
电流 - 峰: 2A
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 36V
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 管件
产品目录页面: 670 (CN2011-ZH PDF)
MCP14700
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, T A = +25°C with V CC = 5.0V.
25
16
20
15
t RL
14
12
10
8
t FH
t FL
10
5
0
t RH
6
4
2
0
0
1500
3000
4500
6000
7500
0
1500
3000
4500
6000
7500
Capacitive Load (pF)
Capacitive Load (pF)
FIGURE 2-1:
Load.
14
Rise Time vs. Capacitive
FIGURE 2-4:
Load.
14
Fall Time vs. Capacitive
13
12
11
C LOAD = 3,300 pF
t FH
13
12
11
C LOAD = 3,300 pF
t RL
10
t RH
10
9
9
8
7
6
8
7
6
5
t FL
-40 -25 -10
5
20 35 50 65 80 95 110 125
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature ( o C)
Temperature ( o C)
FIGURE 2-2:
vs. Temperature.
36
HIGHDR Rise and Fall Time
FIGURE 2-5:
vs. Temperature.
24
LOWDR Rise and Fall Time
34
C LOAD = 3,300 pF
t PDLH
22
C LOAD = 3,300 pF
t PDHL
32
20
30
28
26
24
22
20
t PDHH
18
16
14
12
10
t PDLL
-40 -25 -10
5
20 35 50 65 80 95 110 125
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature ( C)
o
Temperature ( o C)
FIGURE 2-3:
HIGHDR Propagation Delay
FIGURE 2-6:
LOWDR Propagation Delay
vs. Temperature.
? 2009 Microchip Technology Inc.
vs. Temperature.
DS22201A-page 7
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