- 您现在的位置：买卖IC网 > PDF目录17240 > MCP14700-E/SN (Microchip Technology)IC MOSFET DRIVER HIGH/LOW 8SOIC PDF资料下载
参数资料
| 型号： | MCP14700-E/SN |
| 厂商： | Microchip Technology |
| 文件页数： | 9/26页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER HIGH/LOW 8SOIC |
| 标准包装： | 100 |
| 配置： | 高端和低端，同步 |
| 输入类型： | 非反相 |
| 延迟时间： | 27ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 管件 |
| 产品目录页面： | 670 (CN2011-ZH PDF) |
MCP14700
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1 .
TABLE 3-1:
PIN FUNCTION TABLE
MCP14700
Symbol
Description
3x3 DFN
SOIC
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
—
PHASE
PWM HI
PWM LO
GND
LOWDR
V CC
BOOT
HIGHDR
EP
Switch Node
High-Side PWM Control Input Signal
Low-Side PWM Control Input Signal
Ground
Low-side Gate Drive
Supply Input Voltage
Floating Bootstrap Supply
High-Side Gate Drive
Exposed Metal Pad
3.1
Switch Node (PHASE)
3.6
Supply Input Voltage (V CC )
The PHASE pin provides a return path for the high-side
gate driver. The source of the high-side and the drain of
the low-side power MOSFETs are connected to this
pin.
The V CC pin provides bias to the MCP14700 device. A
bypass capacitor is to be placed between this pin and
the GND pin. This capacitor should be placed as close
to the MCP14700 as possible.
3.2
High-Side PWM Control Input
3.7
Floating Bootstrap Supply (BOOT)
Signal (PWM HI )
The PWM input signal to control the high-side power
MOSFET is applied to the PWM HI pin. A logic high on
the PWM HI pin causes the HIGHDR pin to also
transition high.
The BOOT pin is the floating bootstrap supply pin for
the high-side gate drive. A capacitor is connected
between this pin and the PHASE pin to provide the
necessary charge to turn on the high-side power
MOSFET.
3.3
Low-Side PWM Control Input
3.8
High-Side Gate Drive (HIGHDR)
Signal (PWM LO )
The PWM input signal to control the low-side power
MOSFET is applied to the PWM LO pin. A logic high on
The HIGHDR pin provides the gate drive signal to
control the high-side power MOSFET. The gate of the
high-side power MOSFET is connected to this pin.
the PWM LO pin causes the LOWDR pin to also
transition high.
3.9
Exposed Metal Pad (EP)
3.4
Ground (GND)
The exposed metal pad of the DFN package is not
internally connected to any potential. Therefore, this
The GND pin provides ground for the MCP14700
circuitry. It should have a low-impedance connection to
the bias supply source return. High peak currents will
flow out the GND pin when the low-side power
MOSFET is being turned off.
pad can be connected to a ground plane or other
copper plane on a printed circuit board to aid in heat
removal from the package.
3.5
Low-side Gate Drive (LOWDR)
The LOWDR pin provides the gate drive signal to
control the low-side power MOSFET. The gate of the
low-side power MOSFET is connected to this pin.
? 2009 Microchip Technology Inc.
DS22201A-page 9
相关PDF资料 |
PDF描述 |
|---|---|
| LB1608T4R7M | INDUCTOR WOUND 4.7UH 70MA 0603 |
| EMM08DSEH | CONN EDGECARD 16POS .156 EYELET |
| EEM12DTMI | CONN EDGECARD 24POS R/A .156 SLD |
| NSB8ATHE3/81 | DIODE GPP 8A 50V PLASTIC TO263AB |
| HK16082N2S-T | INDUCTOR HI FREQ 2.2+/-0.3NH |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MCP14700T | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:Dual Input Synchronous MOSFET Driver |
| MCP14700T-E/MF | 功能描述:功率驱动器IC 4A Hi-Side MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MCP14700T-E/SN | 功能描述:功率驱动器IC 4A Hi-Side MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MCP14E10 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:3.0A Dual High-Speed Power MOSFET Driver With Enable |
| MCP14E10-E/MF | 功能描述:功率驱动器IC 2A MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。