参数资料
型号: MCP14E9T-E/MF
厂商: Microchip Technology
文件页数: 13/30页
文件大小: 0K
描述: IC MOSFET DRIVER 3A 8DFN-S
标准包装: 3,300
配置: 低端
输入类型: 反相
延迟时间: 45ns
电流 - 峰: 3A
配置数: 2
输出数: 2
电源电压: 4.5 V ~ 18 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-VDFN 裸露焊盘
供应商设备封装: 8-DFN-S(6x5)
包装: 带卷 (TR)
MCP14E9/10/11
4.0
APPLICATION INFORMATION
4.1
General Information
V DD = 18V
MOSFET drivers are high-speed, high-current devices
which are intended to source/sink high-peak currents to
charge/discharge the gate capacitance of external
MOSFETs, or insulated gate bipolar transistors
(IGBTs). In high-frequency switching power supplies,
the Pulse-Width Modulation (PWM) controller may not
have the drive capability to directly drive the power
MOSFET. MOSFET drivers, like the MCP14E9/10/11
family, can be used to provide additional source/sink
current capability.
An additional degree of control has been added to the
Input
Input
1 μF
MCP14E9
? MCP14E11
0.1 μF
Ceramic
Output
C L = 1800 pF
Output
C L = 1800 pF
0V
t D1 90%
t D2
MCP14E9/10/11 family. There are seperate enable
functions for each driver that allow for the immediate
termination of the output pulse, regardless of the state
of the input signal.
4.2 MOSFET Driver Timing
The ability of a MOSFET driver to transition from a fully
OFF state to a fully ON state are characterized by the
drivers’ rise time (t R ), fall time (t F ) and propagation
delays (t D1 and t D2 ). The MCP14E9/10/11 family of driv-
ers can typically charge and discharge an 1800 pF load
capacitance in approximately 15 ns, along with a typical
matched propagation delay of 45 ns. Figure 4-1 and
+5V
Input
10%
18V
Output
0V
FIGURE 4-2:
Waveform.
90%
90%
t R t F
10% 10%
Non-Inverting Driver Timing
Figure 4-2 show the test circuit and timing waveform
used to verify the MCP14E9/10/11 timing.
4.3
Enable Function
The ENB_A and ENB_B enable pins allow the indepen-
Input
Input
V DD = 18V
1 μF
MCP14E9
? MCP14E11
0.1 μF
Ceramic
Output
C L = 1800 pF
Output
C L = 1800 pF
dent control of OUT A and OUT B, respectively. They
are active-high and are internally pulled up to V DD , so
that the default state is to enable the driver. These pins
can be left floating for normal operation.
When an enable pin voltage is above the enable pin
high threshold voltage, V EN_H , that driver output is
enabled and allowed to react to changes in the INPUT
pin voltage state. Similarly, when the enable pin voltage
falls below the enable pin low threshold voltage, V EN_L ,
that driver output is disabled and does not respond to
the changes in the INPUT pin voltage state. When the
driver is disabled, the output goes to a low state. Refer
to Table 4-1 for enable pin logic. The threshold voltages
of the enable function are compatible with logic levels.
+5V
Input
0V 10%
18V
Output
0V
t D1
t F
90%
10%
90%
t D2
t R
90%
10%
Hysteresis is provided to help increase the noise immu-
nity of the enable function, avoiding false triggers of the
enable signal during driver switching. For robust
designs, it is recommended that the slew rate of the
enable pin signal be greater than 1V/ns.
There are propagation delays associated with the
driver receiving an enable signal and the output
reacting. These propagation delays, t D3 and t D4 , are
graphically represented in Figure 4-3 .
FIGURE 4-1:
Waveform.
Inverting Driver Timing
? 2011 Microchip Technology Inc.
DS25005A-page 13
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