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| 型号： | MCP14E9T-E/MF |
| 厂商： | Microchip Technology |
| 文件页数： | 4/30页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 3A 8DFN-S |
| 标准包装： | 3,300 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 45ns |
| 电流 - 峰： | 3A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-S（6x5） |
| 包装： | 带卷 (TR) |
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MCP14E9/10/11
DC CHARACTERISTICS (2) (CONTINUED)
Electrical Specifications: Unless otherwise indicated, T A = +25°C, with 4.5V ≤ V DD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Power Supply
Supply Voltage
V DD
4.5
—
18.0
V
Supply Current
I DD
I DD
I DD
I DD
I DD
I DD
I DD
I DD
—
—
—
—
—
—
—
—
1000
600
800
800
600
300
500
500
1800
900
1600
1600
1000
450
800
800
μA
μA
μA
μA
μA
μA
μA
μA
V IN_A = 3V, V IN_B = 3V,
ENB_A = ENB_B = High
V IN_A = 0V, V IN_B = 0V,
ENB_A = ENB_B = High
V IN_A = 3V, V IN_B = 0V,
ENB_A = ENB_B = High
V IN_A = 0V, V IN_B = 3V,
ENB_A = ENB_B = High
V IN_A = 3V, V IN_B = 3V,
ENB_A = ENB_B = Low
V IN_A = 0V, V IN_B = 0V,
ENB_A = ENB_B = Low
V IN_A = 3V, V IN_B = 0V,
ENB_A = ENB_B = Low
V IN_A = 0V, V IN_B = 3V,
ENB_A = ENB_B = Low
Note 1:
2:
3:
Switching times are ensured by design.
Tested during characterization, not production tested.
Package power dissipation is dependent on the copper pad area of the PCB.
DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE) (2)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ V DD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic ‘ 1 ’, High Input Voltage
Logic ‘ 0 ’, Low Input Voltage
V IH
V IL
2.4
—
—
—
—
0.8
V
V
Input Current
I IN
-10
—
+10
μA
0V ≤ V IN ≤ V DD
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
V OH
V OL
R OH
R OL
V DD – 0.025
—
—
—
—
—
7
7
—
0.025
9
9
V
V
Ω
Ω
DC Test
DC Test
I OUT = 10 mA, V DD = 18V
I OUT = 10 mA, V DD = 18V
Switching
Time (1)
Rise Time
Fall Time
Propagation Delay Time
Propagation Delay Time
t R
t F
t D1
t D2
—
—
—
—
25
25
45
45
40
40
65
65
ns
ns
ns
ns
Figure 4-1 , Figure 4-2 ,
C L = 1800 pF
Figure 4-1 , Figure 4-2 ,
C L = 1800 pF
Figure 4-1 , Figure 4-2
Figure 4-1 , Figure 4-2
Note 1:
2:
Switching times are ensured by design.
Tested during characterization, not production tested.
DS25005A-page 4
? 2011 Microchip Technology Inc.
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