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参数资料
| 型号： | MCP14E9T-E/MF |
| 厂商： | Microchip Technology |
| 文件页数： | 14/30页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER 3A 8DFN-S |
| 标准包装： | 3,300 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 45ns |
| 电流 - 峰： | 3A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-S（6x5） |
| 包装： | 带卷 (TR) |
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MCP14E9/10/11
TABLE 4-1:
ENABLE PIN LOGIC
MCP14E9
MCP14E10
MCP14E11
ENB_A
H
H
H
H
L
ENB_B
H
H
H
H
L
IN A
H
H
L
L
X
IN B
H
L
H
L
X
OUT A
L
L
H
H
L
OUT B
L
H
L
H
L
OUT A
H
H
L
L
L
OUT B
H
L
H
L
L
OUT A
L
L
H
H
L
OUT B
H
L
H
L
L
4.5
PCB Layout Considerations
5V
A proper PCB layout is important in a high-current, fast
switching circuit, to provide proper device operation
ENB_x
0V
V EN_H
V EN_L
and robustness to the design. The PCB trace loop area
and inductance should be minimized by the use of
ground planes or trace under MOSFET gate drive sig-
nals, separate analog and power grounds, and local
driver decoupling.
V DD
t D3
t D4
Placing a ground plane beneath the MCP14E9/10/11
will help as a radiated noise shield, as well as providing
some heat sinking for power dissipated within the
90%
device.
OUT x
4.6
Power Dissipation
0V
10%
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements ( Equation 4-1 ).
FIGURE 4-3:
Enable Timing Waveform.
EQUATION 4-1:
P T = P L + P Q + P CC
4.4
Decoupling Capacitors
Where:
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge capaci-
tive loads quickly. For example, approximately 2.0A are
needed to charge an 1800 pF load with 18V in 15 ns.
P T
P L
P Q
P CC
=
=
=
=
Total Power Dissipation
Load Power Dissipation
Quiescent Power Dissipation
Operating Power Dissipation
To operate the MOSFET driver over a wide frequency
range, with low supply impedance, a ceramic and low-
4.6.1
CAPACITIVE LOAD DISSIPATION
ESR film capacitors are recommended to be placed in
parallel, between the driver, V DD and GND. A 1.0 μF,
low-ESR film capacitor and a 0.1 μF ceramic capacitor
placed between pins, 6 and 3, should be used. These
capacitors should be placed close to the driver to mini-
mize circuit board parasitics and provide a local source
for the required current.
The power dissipation caused by a capacitive load is a
direct function of frequency, total capacitive load and
supply voltage. The power lost in the MOSFET driver
for a complete charging and discharging cycle of a
MOSFET is:
EQUATION 4-2:
Where:
P L = f × C T × V DD
2
f = Switching Frequency
C T = Total Load Capacitance
V DD = MOSFET Driver Supply Voltage
DS25005A-page 14
? 2011 Microchip Technology Inc.
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