参数资料
型号: MCP1727T-1802E/SN
厂商: Microchip Technology
文件页数: 20/32页
文件大小: 0K
描述: IC REG LDO 1.8V 1.5A 8SOIC
产品培训模块: High Current LDOs
标准包装: 3,300
稳压器拓扑结构: 正,固定式
输出电压: 1.8V
输入电压: 2.3 V ~ 6 V
电压 - 压降(标准): 0.33V @ 1.5A
稳压器数量: 1
电流 - 输出: 1.5A(最小)
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
MCP1727
5.0
5.1
APPLICATION CIRCUITS/
ISSUES
Typical Application
In addition to the LDO pass element power dissipation,
there is power dissipation within the MCP1727 as a
result of quiescent or ground current. The power
dissipation as a result of the ground current can be
calculated using the following equation:
The MCP1727 is used for applications that require high
LDO output current and a power good output.
MCP1727-2.5
EQUATION 5-2:
P I ( GND ) = V IN ( MAX ) × I VIN
Where:
V IN = 3.3V
C 1
10 μF
On
O ff
1 V IN V OUT 8
2 V IN Sense 7
3 SHDN C DELAY 6
4 GND PWRGD 5
V OUT = 2.5V @ 1.5A
R 1
10k Ω C 2
10 μF
C 3
1000 pF
P I(GND
V IN(MAX)
I VIN
=
=
=
Power dissipation due to the
quiescent current of the LDO
Maximum input voltage
Current flowing in the V IN pin
with no LDO output current
(LDO quiescent current)
The total power dissipated within the MCP1727 is the
sum of the power dissipated in the LDO pass device
FIGURE 5-1:
PWRGD
Typical Application Circuit.
and the P(I GND ) term. Because of the CMOS
construction, the typical I GND for the MCP1727 is
120 μA. Operating at a maximum of 3.465V results in a
power dissipation of 0.49 milli-Watts. For most
5.1.1 APPLICATION CONDITIONS
Package Type = 3x3DFN8
Input Voltage Range = 3.3V ± 5%
V IN maximum = 3.465V
V IN minimum = 3.135V
V DROPOUT (max) = 0.525V
V OUT (typical) = 2.5V
I OUT = 1.5A maximum
P DISS (typical) = 1.2W
Temperature Rise = 49.2 ° C
5.2 Power Calculations
5.2.1 POWER DISSIPATION
The internal power dissipation within the MCP1727 is a
function of input voltage, output voltage, output current
and quiescent current. Equation 5-1 can be used to
calculate the internal power dissipation for the LDO.
EQUATION 5-1:
P LDO = ( V IN ( MAX ) ) – V OUT ( MIN ) ) × I OUT ( MAX ) )
Where:
applications, this is small compared to the LDO pass
device power dissipation and can be neglected.
The maximum continuous operating junction
temperature specified for the MCP1727 is +125 ° C . To
estimate the internal junction temperature of the
MCP1727, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (R θ JA ) of the device. The thermal resistance
from junction to ambient for the 3x3 DFN package is
estimated at 41 ° C/W.
EQUATION 5-3:
T J ( MAX ) = P TOTAL × R θ JA + T AMAX
T J(MAX) = Maximum continuous junction
temperature
P TOTAL = Total device power dissipation
R θ JA = Thermal resistance from junction to
ambient
T AMAX = Maximum ambient temperature
P LDO
V IN(MAX)
V OUT(MIN)
=
=
=
LDO Pass device internal
power dissipation
Maximum input voltage
LDO minimum output voltage
DS21999B-page 20
? 2007 Microchip Technology Inc.
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