参数资料
型号: MCP1727T-1802E/SN
厂商: Microchip Technology
文件页数: 7/32页
文件大小: 0K
描述: IC REG LDO 1.8V 1.5A 8SOIC
产品培训模块: High Current LDOs
标准包装: 3,300
稳压器拓扑结构: 正,固定式
输出电压: 1.8V
输入电压: 2.3 V ~ 6 V
电压 - 压降(标准): 0.33V @ 1.5A
稳压器数量: 1
电流 - 输出: 1.5A(最小)
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
MCP1727
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, V IN = V OUT(MAX) + V DROPOUT(MAX) (Note 1) , V R =1.8V for Adjustable Output,
I OUT = 1 mA, C IN = C OUT = 4.7 μF (X7R Ceramic), T A = +25°C.
Boldface type applies for junction temperatures, T J ( Note 7 ) of -40°C to +125°C
Parameters
Output Noise
Power Supply Ripple Rejection
Ratio
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
Sym
e N
PSRR
T SD
Δ T SD
Min
Typ
2.0
60
150
10
Max
Units
μV/ √ Hz
dB
°C
°C
Conditions
I OUT = 200 mA, f = 1 kHz, C OUT
= 10 μF (X7R Ceramic), V OUT =
2.5V
f = 100 Hz, C OUT = 10 μF,
I OUT = 10 mA,
V INAC = 30 mV pk-pk,
C IN = 0 μF
I OUT = 100 μA, V OUT = 1.8V,
V IN = 2.8V
I OUT = 100 μA, V OUT = 1.8V,
V IN = 2.8V
Note 1:
2:
3:
4:
5:
6:
7:
The minimum V IN must meet two conditions: V IN ≥ 2.3V and V IN ≥ V OUT(MAX) + V DROPOUT(MAX).
V R is the nominal regulator output voltage for the fixed cases. V R = 1.2V, 1.8V, etc. V R is the desired set point output
voltage for the adjustable cases. V R = V ADJ * ((R 1 /R 2 )+1). Figure 4-1 .
TCV OUT = (V OUT-HIGH – V OUT-LOW ) *10 6 / (V R * Δ Temperature). V OUT-HIGH is the highest voltage measured over the
temperature range. V OUT-LOW is the lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is
tested over a load range from 1 mA to the maximum specified output current.
Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value that was measured with an input voltage of V OUT = V R + V DROPOUT(MAX) .
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e., T A , T J , θ JA ). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained
junction temperatures above 150°C can impact device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise indicated, all limits apply for V IN = 2.3V to 6.0V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Operating Junction Temperature Range
Maximum Junction Temperature
Storage Temperature Range
T J
T J
T A
-40
-65
+125
+150
+150
°C
°C
°C
Steady State
Transient
Thermal Package Resistances
Thermal Resistance, 8LD 3x3 DFN
θ JA
41
°C/W
4-Layer JC51-7
Standard Board with
vias
Thermal Resistance, 8LD SOIC
θ JA
150
°C/W
4-Layer JC51-7
Standard Board
? 2007 Microchip Technology Inc.
DS21999B-page 7
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