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参数资料
| 型号： | MCP1826ST-0802E/DB |
| 厂商： | Microchip Technology |
| 文件页数： | 19/36页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 0.8V 1A SOT223-3 |
| 产品培训模块： | High Current LDOs |
| 标准包装： | 4,000 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 0.8V |
| 输入电压： | 2.3 V ~ 6 V |
| 电压 - 压降（标准）： | 0.25V @ 1A |
| 稳压器数量： | 1 |
| 电流 - 输出： | 1A（最小） |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 带卷 (TR) |
| 其它名称： | MCP1826ST-0802E/DBTR |
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MCP1826/MCP1826S
5.0
5.1
APPLICATION CIRCUITS/
ISSUES
Typical Application
In addition to the LDO pass element power dissipation,
there is power dissipation within the MCP1826/
MCP1826S as a result of quiescent or ground current.
The power dissipation as a result of the ground current
can be calculated using the following equation:
The MCP1826/MCP1826S is used for applications that
require high LDO output current and a power good
output.
EQUATION 5-2:
P I ( GND ) = V IN ( MAX ) × I VIN
Where:
O ff
On
SHDN
MCP1826-2.5
1 2 3 4 5
V OUT = 2.5V @ 1000 mA
R 1
10 k Ω C 2
10 μF
P I(GND
V IN(MAX)
=
=
Power dissipation due to the
quiescent current of the LDO
Maximum input voltage
3.3V
V IN
C 1
4.7 μF
GND
PWRGD
I VIN
=
Current flowing in the V IN pin
with no LDO output current
(LDO quiescent current)
The total power dissipated within the MCP1826/
FIGURE 5-1: Typical Application Circuit.
5.1.1 APPLICATION CONDITIONS
Package Type = TO-220-5
Input Voltage Range = 3.3V ± 5%
V IN maximum = 3.465V
V IN minimum = 3.135V
V DROPOUT (max) = 0.350V
V OUT (typical) = 2.5V
I OUT = 1000 mA maximum
P DISS (typical) = 0.965W
Temperature Rise = 28.27 ° C
MCP1826S is the sum of the power dissipated in the
LDO pass device and the P(I GND ) term. Because of the
CMOS construction, the typical I GND for the MCP1826/
MCP1826S is 120 μA. Operating at a maximum V IN of
3.465V results in a power dissipation of 0.12 milli-Watts
for a 2.5V output. For most applications, this is small
compared to the LDO pass device power dissipation
and can be neglected.
The maximum continuous operating junction
temperature specified for the MCP1826/MCP1826S is
+125 ° C . To estimate the internal junction temperature
of the MCP1826/MCP1826S, the total internal power
dissipation is multiplied by the thermal resistance from
junction to ambient (R θ JA ) of the device. The thermal
resistance from junction to ambient for the TO-220-5
package is estimated at 29.3 ° C/W.
5.2
5.2.1
Power Calculations
POWER DISSIPATION
EQUATION 5-3:
T J ( MAX ) = P TOTAL × R θ JA + T AMAX
The internal power dissipation within the MCP1826/
MCP1826S is a function of input voltage, output
voltage, output current and quiescent current.
power dissipation for the LDO.
EQUATION 5-1:
P LDO = ( V IN ( MAX ) ) – V OUT ( MIN ) ) × I OUT ( MAX ) )
Where:
T J(MAX) = Maximum continuous junction
temperature
P TOTAL = Total device power dissipation
R θ JA = Thermal resistance from junction to
ambient
T AMAX = Maximum ambient temperature
P LDO
V IN(MAX)
V OUT(MIN)
=
=
=
LDO Pass device internal
power dissipation
Maximum input voltage
LDO minimum output voltage
? 2007 Microchip Technology Inc.
DS22057A-page 19
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相关代理商/技术参数 |
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| MCP1826ST-1202E/DB | 功能描述:低压差稳压器 - LDO 1A CMOS LDO Vout 1.2V ETR RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MCP1826ST-1202E/EB | 功能描述:低压差稳压器 - LDO 1A CMOS LDO Vout 1.2V ETR RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MCP1826ST-1802E/DB | 功能描述:低压差稳压器 - LDO 1A CMOS LDO Vout 1.8V ETR RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MCP1826ST-1802E/EB | 功能描述:低压差稳压器 - LDO 1A CMOS LDO Vout 1.8V ETR RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| MCP1826ST-2502E/DB | 功能描述:低压差稳压器 - LDO 1A CMOS LDO Vout 2.5V ETR RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
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