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| 型号： | MCP1826ST-0802E/DB |
| 厂商： | Microchip Technology |
| 文件页数： | 20/36页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 0.8V 1A SOT223-3 |
| 产品培训模块： | High Current LDOs |
| 标准包装： | 4,000 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 0.8V |
| 输入电压： | 2.3 V ~ 6 V |
| 电压 - 压降（标准）： | 0.25V @ 1A |
| 稳压器数量： | 1 |
| 电流 - 输出： | 1A（最小） |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 带卷 (TR) |
| 其它名称： | MCP1826ST-0802E/DBTR |
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MCP1826/MCP1826S
( T J ( MAX ) – T A ( MAX ) )
R θ JA
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. Equation 5-4 can be
used to determine the package maximum internal
power dissipation.
EQUATION 5-4:
P D ( MAX ) = ---------------------------------------------------
P D(MAX) = Maximum device power dissipation
T J(MAX) = maximum continuous junction
temperature
T A(MAX) = maximum ambient temperature
R θ JA = Thermal resistance from junction-to-
ambient
EQUATION 5-5:
T J ( RISE ) = P D ( MAX ) × R θ JA
T J(RISE) = Rise in device junction temperature
over the ambient temperature
P D(MAX) = Maximum device power dissipation
R θ JA = Thermal resistance from junction-to-
ambient
EQUATION 5-6:
T J = T J ( RISE ) + T A
T J = Junction temperature
T J(RISE) = Rise in device junction temperature
over the ambient temperature
T A = Ambient temperature
DS22057A-page 20
5.3 Typical Application
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
is calculated in the following example. The power
dissipation as a result of ground current is small
enough to be neglected.
5.3.1 POWER DISSIPATION EXAMPLE
Package
Package Type = TO-220-5
Input Voltage
V IN = 3.3V ± 5%
LDO Output Voltage and Current
V OUT = 2.5V
I OUT = 1000 mA
Maximum Ambient Temperature
T A(MAX) = 60°C
Internal Power Dissipation
P LDO(MAX) = (V IN(MAX) – V OUT(MIN) ) x I OUT(MAX)
P LDO = ((3.3V x 1.05) – (2.5V x 0.975))
x 1000 mA
P LDO = 1.028 Watts
5.3.1.1 Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction-to-ambient for the application. The
thermal resistance from junction-to-ambient (R θ JA ) is
derived from EIA/JEDEC standards for measuring
thermal resistance. The EIA/JEDEC specification is
JESD51. The standard describes the test method and
board specifications for measuring the thermal
resistance from junction to ambient. The actual thermal
resistance for a particular application can vary
depending on many factors such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT23 Can Dissipate in an Appli-
cation” (DS00792), for more information regarding this
subject.
T J(RISE) = P TOTAL x R θ JA
T JRISE = 1.028 W x 29.3 ° C/W
T JRISE = 30.12 ° C
? 2007 Microchip Technology Inc.
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