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参数资料
| 型号： | MCR12D |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 晶闸管 |
| 英文描述： | GT 10C 10#16 SKT RECP |
| 中文描述： | 12 A, 400 V, SCR, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 92K |
| 代理商： | MCR12D |
MCR12D, MCR12M, MCR12N
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θ
JC
R
θ
JA
TL
2.2
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″
from Case for 10 Seconds
260
°
C
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VD = Rated VDRM and VRRM; Gate Open)
TJ = 25
°
C
TJ = 125
°
C
IDRM,
IRRM
—
—
—
—
0.01
2.0
mA
ON CHARACTERISTICS
Peak Forward On–State Voltage* (ITM = 24 A)
Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100
)
Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current (VD = 12 V, IG = 20 mA)
Gate Trigger Voltage (Continuous dc) (VD = 12 V; RL =100
)
DYNAMIC CHARACTERISTICS
VTM
IGT
IH
IL
VGT
—
—
2.2
Volts
2.0
8.0
20
mA
4.0
20
40
mA
6.0
25
60
mA
0.5
0.65
1.0
Volts
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125
°
C)
dv/dt
100
250
—
V/
μ
s
Repetitive Critical Rate of Rise of On–State Current
IPK = 50 A, Pw = 40
μ
sec, diG/dt = 1 A/
μ
sec, Igt = 50 mA
di/dt
—
—
50
A/
μ
s
*Indicates Pulse Test: Pulse Width
2.0 ms, Duty Cycle
2%.
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相关代理商/技术参数 |
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| MCR12DCM | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Silicon Controlled Rectifiers Reverse Blocking Thyristors |
| MCR12DCMT4 | 功能描述:SCR 600V 12A RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| MCR12DCMT4G | 功能描述:SCR 600V 12A RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| MCR12DCMT4G | 制造商:ON Semiconductor 功能描述:SCR Thyristor |
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