参数资料
| 型号： | MCZ33390EF |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 11/15页 |
| 文件大小： | 0K |
| 描述： | IC TXRX SERIAL LINK 8-SOIC |
| 标准包装： | 98 |
| 类型： | 收发器 |
| 驱动器/接收器数： | 1/1 |
| 规程： | J-1850 |
| 电源电压： | 9 V ~ 16 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 管件 |
Analog Integrated Circuit Device Data
Freescale Semiconductor
5
33390
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions of 7.0 V
≤ V
BAT ≤ 16 V, -40°C ≤ TA ≤ 125°C, SLEEP = 5.0 V unless otherwise noted.
Typical values reflect the parameter's approximate midpoint average value with VBAT = 13 V, TA = 25°C. All positive currents are
into the pin. All negative currents are out of the pin.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER CONSUMPTION
Operational Battery Current (RMS with Tx = 7.812 kHz Square Wave)
BUS Load = 1380
to GND, 3.6 nF to GND
BUS Load = 257
to GND, 20.2 nF to GND
IBAT(OP1)
IBAT(OP2)
–
3.0
22.4
11.5
32
mA
Battery Bus Low Input Current
After SLEEP Toggle Low to High; Prior to Tx Toggling
After Tx Toggle High to Low
IBAT(BUS L1)
IBAT(BUS L2)
–
1.1
6.4
3.0
8.5
mA
Sleep State Battery Current
VSLEEP = 0 V
IBAT(SLEEP)
–
38.2
65
A
BUS
BUS Input Receiver Threshold (6)
Threshold High (Bus Increasing until Rx
≥ 3.0 V)
Threshold Low (Bus Decreasing until Rx
≤ 3.0 V)
Threshold in Sleep State (SLEEP = 0 V)
Hysteresis (VBUS(IH) - VBUS(IL), SLEEP = 0 V)
VBUS(IH)
VBUS(IL)
BUSTH(SLEEP)
VBUS(HYST)
4.25
–
2.4
0.1
3.9
3.7
3.0
0.2
–
3.5
3.4
0.6
V
BUS-Out Voltage (257
≤ R
BUS(L) to GND ≤ 1380 )
8.2 V
≤ V
BAT ≤ 16 V, Tx = 5.0 V
4.25 V
≤ V
BAT ≤ 8.2 V, Tx = 5.0 V
Tx = 0 V
VBUS(OUT1)
VBUS(OUT2)
VBUS(OUT3)
6.25
VBAT - 1.6
–
6.9
–
0.27
8.0
VBAT
0.7
V
BUS Short Circuit Output Current
Tx = 5.0 V, -2.0 V
≤ V
BUS ≤ 4.8 V
IBUS(SHORT)
60
129
170
mA
BUS Leakage Current
-2.0 V
≤ V
BUS ≤ 0 V
0 V
≤ V
BUS ≤ VBAT
IBUS(LEAK1)
IBUS(LEAK2)
-500
–
-55
189
–
500
A
Increase Temperature until VBUS ≤ 2.5 V
TBUS(LIM)
150
170
190
°C
BUS Thermal Shutdown Hysteresis (8)
TBUS(LIM) - TBUS(REEN)
TBUS(LIMHYS)
10
12
15
°C
BUS and LOAD Current with Loss of VBAT or GND (IBAT = 0 A) (see
-18 V
≤ V
BUS ≤ 9.0 V
-18 V
≤ V
LOAD ≤ 9.0 V
IBUS (LOSS)
ILOAD (LOSS)
–
0.00
0.1
mA
Notes
6.
Typical threshold value is the approximate actual occurring switch point value with VBAT = 13 V, TA = 25°C.
7.
Device characterized but not production tested for thermal shutdown.
8.
Device characterized but not production tested for thermal shutdown hysteresis.
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