参数资料
| 型号： | MCZ33810EK |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 6/37页 |
| 文件大小： | 0K |
| 描述： | IC IGNITION INJECTOR 32-SOIC |
| 标准包装： | 42 |
| 应用： | 自动 |
| 电流 - 电源： | 10mA |
| 电源电压： | 4.5 V ~ 36 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 32-BSOP（0.295"，7.50mm 宽）裸露焊盘 |
| 供应商设备封装： | 32-SOICW 裸露焊盘 |
| 包装： | 管件 |
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 2. Maximum Ratings (continued)
All voltages are with respect to ground unless otherwise noted.
Ratings
Symbol
Value
Unit
Notes
1. Exceeding these limits may cause malfunction or permanent damage to the device.
2. ESD data available upon request.
3. ESD testing is performed in accordance with the Human Body Model (HBM) (AEC-Q100-002), the Machine Model (MM) (AEC-Q100-
003), and the Charge Device Model (CDM), Robotic (AEC-Q100-011).
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions of 3.0 V ≤ VDD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 32 V, -40 ° C ≤ TC ≤ 125 ° C, and calibrated
timers, unless otherwise noted. Where typical values reflect the parameter’s approx. average value with VPWR = 13 V, TA =
25 ° C.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER INPUT (VDD, VPWR)
Supply Voltage (4)
Fully Operational
Full Parameter Specification
V PWR ( FO )
4.5
6.0
–
36
32
V
Supply Current
I VPWR ( ON )
mA
All Outputs Disabled (Normal Mode)
Sleep State Supply Current (Must have V DD ≤ 0.8 V for sleep state),
V PWR = 32 V
I VPWR (SS)
–
–
10.0
15
14.0
30
μ A
V PWR Over-voltage Shutdown Threshold Voltage (5)
V PWR Over-voltage Shutdown Hysteresis Voltage
V PWR( OV)
V PWR(OV-HYS)
36.5
0.5
39
1.5
42
3.0
V
V
V PWR Under-voltage Shutdown Threshold Voltage
(6)
V PWR( UV)
3.0
4.0
4.4
V
V PWR Under-voltage Shutdown Hysteresis Voltage
V PWR Low Operating Voltage (Low-voltage reported via the SPI) (7)
VDD Supply Voltage
V PWR( UV-HYS)
V PWR( LOV)
V DD
100
5.3
3.0
200
–
–
300
8.99
5.5
mV
V
V
VDD Supply Current
I VDD
mA
Static Condition and does not include VDD current out of device
–
–
1.0
VDD Supply Under-voltage (Sleep State) Threshold Voltage (8)
V DD(UV)
0.8
2.5
2.8
V
INJECTOR DRIVER OUTPUTS (OUT 0:3)
Drain-to-Source ON Resistance
I OUT = 1.0 A, T J = 125 ° C, VPWR = 13 V
I OUT = 1.0 A, T J = 25 ° C, VPWR = 13 V
I OUT = 1.0 A, T J = -40 ° C, VPWR = 13 V
Output Self Limiting Current
R DS (ON)
I OUT (LIM)
–
–
–
3.0
–
0.2
–
–
0.3
–
–
6.0
Ω
A
Output Fault Detection Voltage Threshold
(9)
V OUT(FLT-TH)
Outputs Programmed OFF (Open Load)
2.0
2.5
3.0
V
Outputs Programmed ON (Short to Battery)
Output OFF Open Load Detection Current
I (OFF)OCO
μ A
V DRAIN = 18 V, Outputs Programmed OFF
V DRAIN = 32 V, Outputs Programmed OFF (-40°C)
Output ON Open Load Detection Current
Current less then specification value considered open
I (ON)OCO
40
20
75
100
115
115
200
mA
33810
Analog Integrated Circuit Device Data
6
Freescale Semiconductor
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