参数资料
| 型号： | MCZ33810EK |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 8/37页 |
| 文件大小： | 0K |
| 描述： | IC IGNITION INJECTOR 32-SOIC |
| 标准包装： | 42 |
| 应用： | 自动 |
| 电流 - 电源： | 10mA |
| 电源电压： | 4.5 V ~ 36 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 32-BSOP（0.295"，7.50mm 宽）裸露焊盘 |
| 供应商设备封装： | 32-SOICW 裸露焊盘 |
| 包装： | 管件 |
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ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions of 3.0 V ≤ VDD ≤ 5.5 V, 6.0 V ≤ VPWR ≤ 32 V, -40 ° C ≤ TC ≤ 125 ° C, and calibrated
timers, unless otherwise noted. Where typical values reflect the parameter’s approx. average value with VPWR = 13 V, TA =
25 ° C.
Characteristic
Symbol
Min
Typ
Max
Unit
INJECTOR DRIVER OUTPUTS (OUT 0:3) (Continued)
Output Clamp Voltage 1
V OC1
V
I D = 20 mA
Output Leakage Current
VDD = 5.0 V, V DRAIN = 24 V, Open Load Detection Current Disabled
VDD = 5.0 V, V DRAIN = V OC - 1.0 V, Open Load Detection Current Disabled
VDD = 0 V, V DRAIN = 24 V, Sleep State
I OUT (LKG)
48
–
–
–
53
–
–
–
58
20
3000
10
μ A
Over-temperature Shutdown (10)
Over-temperature Shutdown Hysteresis (10)
T LIM
T LIM (HYS)
155
5.0
–
10
185
15
° C
° C
IGNITION (IGBT) GATE DRIVER PARAMETERS (GD 0:3 FB0:3)
Gate Driver Output Voltage
I GD = 500 μ A
I GD = -500 μ A
Sleep Mode Gate to Source Resistor
V GS (ON)
V GS (OFF)
R GS (PULLDOWN
4.8
0
100
7.0
0.375
200
9.0
0.5
300
V
K Ω
)
Sleep Mode FBx pin Leakage Current
I FBX (LKG)
μ A
VDD = 0 V, V FBx = 24 V,
Feedback Sense Current (FBx Input Current)
FBx = 32 V, Outputs Programmed OFF
I FBX(FLT-SNS)
–
–
1.0
1.0
μ A
Gate Drive Source Current (1 ≤ V GD ≤ 3)
I GATEDRIVE
650
780
950
μ A
Gate Drive Turn Off Resistance
R DS(ON)
Ω
SOFT SHUTDOWN FUNCTION (VOLTAGES REFERENCED TO IGBT COLLECTOR)
Low Voltage Flyback Clamp
500
–
1000
Driver Command Off, Soft Shutdown Enabled, GDx = 2.0 V
V LVC
VPWR
+9.0
VPWR
+11
VPWR + 13
V
Spark Duration Comparator Threshold (referenced to IC Ground Tab)
V TH-RISE
V
Rising Edge Relative to VPWR
18
21
24
Spark Duration Comparator Threshold (referenced to IC Ground Tab) (11)
Falling Edge Relative to VPWR, Default = 5.5 V Assuming ideal external
10:1 voltage divider. Voltage measured at high end of divider, not at pin.
Tolerance of divider not included
V TH-FALL
1.2
4.9
7.4
9.9
2.75
5.5
8.2
11.00
3.6
6.1
9.1
12.1
V
Open Secondary Comparator Threshold (referenced from primary to
V TH-RISE
V
Rising Edge Relative to GND. No hysteresis with 10:1 voltage divider.
11.5
–
15.5
CURRENT SENSE COMPARATOR (RSP, RSN)
NOMI Trip Threshold Accuracy - Steady State Condition
NOMI TRIPTA
%
3.0 A across 0.02 Ω (RSP - RSN = 60 mV)
10.75 A across 0.04 Ω (RSP - RSN = 430 mV)
-10
–
10
33810
Analog Integrated Circuit Device Data
8
Freescale Semiconductor
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