参数资料
型号: MCZ33927EKR2
厂商: Freescale Semiconductor
文件页数: 3/44页
文件大小: 0K
描述: IC FET PRE-DRIVER 3PH 54-SOIC
标准包装: 1,000
配置: 3 相桥
输入类型: 反相和非反相
延迟时间: 265ns
电流 - 峰: 600mA
配置数: 1
输出数: 3
高端电压 - 最大(自引导启动): 75V
电源电压: 8 V ~ 40 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 54-BSSOP(0.295",7.50mm 宽)裸露焊盘
供应商设备封装: 54-SOICW-EP
包装: 带卷 (TR)
PIN CONNECTIONS
PIN CONNECTIONS
PHASEA
PGND
EN1
EN2
RST
N/C
PUMP
VPUMP
VBAT
PHASEB
PHASEC
PA_HS
PA_LS
VDD
PB_HS
PB_LS
I NT
CS
SI
SCLK
SO
PC_LS
PC_HS
AMP_OUT
AMP_N
AMP_P
OC_OUT
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
.35
34
33
32
31
30
29
28
VPWR
N/C
N/C
VLS
N/C
N/C
PA_BOOT
PA_HS_G
PA_HS_S
PA_LS_G
PGNDA
PB_BOOT
PB_HS_G
PB_HS_S
PB_LS_G
PGNDB
PC_BOOT
PC_HS_G
PC_HS_S
PC_LS_G
PGNDC
N/C
VLS_CAP
GND1
GND0
VSS
OC_TH
Figure 3. 33927 Pin Connections
Table 1. 33927 Pin Definitions
A functional description of each pin can be found in the Functional Pin Description section beginning on page 20 .
Pin
1
Pin Name
PHASEA
Pin Function
Digital Output
Formal Name
Phase A
Definition
Totem Pole output of Phase A comparator. This output is low when the
voltage on PA_HS_S (Source of High-Side FET) is less than 50% of VBAT
2
3
PGND
EN1
Ground
Digital Input
Power Ground
Enable 1
Power ground for charge pump
Logic signal input must be high (ANDed with EN2) to enable any gate drive
output.
4
EN2
Digital Input
Enable 2
Logic signal input must be high (ANDed with EN1) to enable any gate drive
output
5
6, 33, 49,
RST
N/C
Digital Input
Reset
No Connect
Reset input
These pins do not connect
50, 52, 53
7
PUMP
Power Drive
Pump
Charge pump output
Out
8
9
10
VPUMP
VBAT
PHASEB
Power Input
Digital Input
Digital Output
Voltage Pump
Voltage Battery
Phase B
Charge pump supply
Battery supply
Totem Pole output of Phase B comparator. This output is low when the
voltage on PB_HS_S (Source of High-Side FET) is less than 50% of VBAT
11
PHASEC
Digital Output
Phase C
Totem Pole output of Phase C comparator. This output is low when the
voltage on PC_HS_S (Source of High-Side FET) is less than 50% of VBAT
33927
Analog Integrated Circuit Device Data
Freescale Semiconductor
3
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