参数资料
型号: MCZ33927EKR2
厂商: Freescale Semiconductor
文件页数: 6/44页
文件大小: 0K
描述: IC FET PRE-DRIVER 3PH 54-SOIC
标准包装: 1,000
配置: 3 相桥
输入类型: 反相和非反相
延迟时间: 265ns
电流 - 峰: 600mA
配置数: 1
输出数: 3
高端电压 - 最大(自引导启动): 75V
电源电压: 8 V ~ 40 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 54-BSSOP(0.295",7.50mm 宽)裸露焊盘
供应商设备封装: 54-SOICW-EP
包装: 带卷 (TR)
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS
VBAT Supply Voltage
Normal Operation (Steady-State)
Transient Survival (1)
VPWR Supply Voltage
Normal Operation (Steady-State)
Transient Survival (1)
V BAT
V PWR
58
-1.5 to 80
58
-1.5 to 80
V
V
Charge Pump (PUMP, VPUMP)
VLS Regulator Outputs (VLS , VLS_CAP)
Logic Supply Voltage
Logic Output (INT, SO, PHASEA, PHASEB, PHASEC, OC_OUT) (2)
Logic Input Pin Voltage (EN1, EN2, Px_HS, Px_LS, SI, SCLK, CS, RST) 10mA
Amplifier Input Voltage
(Both Inputs-GND), (AMP_P - GND) or (AMP_N - GND) 6mA source or sink
Over-current comparator threshold 10mA
(3)
Driver Output Voltage
High-Side bootstrap (PA_BOOT, PB_BOOT, PC_BOOT)
High-Side (PA_HS_G, PB_HS_G, PC_HS_G)
Low-Side (PA_LS_G, PB_LS_G, PC_LS_G)
Driver Voltage Transient Survival
High-Side (PA_HS_G, PB_HS_G, PC_HS_G, PA_HS_S, PB_HS_S,
PC_HS_S)
Low-Side (PA_LS_G, PB_LS_G, PC_LS_G, PGNDA, PGNDB, PGNDC)
Continuous Output Current
V PUMP
V LS
V DD
V OUT
V IN
V IN_A
V OC
V BOOT
V HS_G
V LS_G
V HS_G
V HS_S
V LS_G
V PGND
I GATE
-0.3 to 40
-0.3 to 18
-0.3 to 7.0
-0.3 to 7.0
-0.3 to 7.0
-7.0 to 10.0
-0.3 to 7.0
75
75
16
-7.0
-7.0
-7.0
-7.0
-0.1 to 0.1
V
V
V
V
V
V
V
V
V
A
ESD Voltage
(4)
V ESD
V
Human Body Model - HBM (All pins except for the pins listed below)
Pins: PA_Boot, PA_HS_S, PA_HS_G, PB_Boot, PB_HS_S,
PB_HS_G, PC_Boot, PC_HS_S, PC_HS_G, VPWR
Charge Device Model - CDM
Notes
±2000
±1000
±750
1.
2.
3.
4.
The device will withstand load dump transient as defined by ISO7637 with peak voltage of 80V.
Short-circuit proof, the device will not be damaged or induce unexpected behavior due to shorts to external sources within this range.
This voltage should not be applied without also taking voltage at HS_S and voltage at PGND_x into account.
ESD testing is performed in accordance with the Human Body Model (HBM) (C ZAP = 100pF, R ZAP = 1500 ? ) and the Charge Device
Model (CDM), Robotic (C ZAP = 4.0pF).
33927
Analog Integrated Circuit Device Data
6
Freescale Semiconductor
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