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参数资料
| 型号： | MG600Q1US65H |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600 A, 1200 V, N-CHANNEL IGBT |
| 封装： | 2-109F1A, 4 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 195K |
| 代理商： | MG600Q1US65H |
MG600Q1US65H
2003-12-19
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGES
VGE = ±20 V, VCE = 0
±500
nA
Collector cut-off current
ICES
VCE = 1200 V, VGE = 0
4.0
mA
Gate-emitter cut-off voltage
VGE (off)
IC = 600 mA, VCE = 5 V
4.0
7.0
V
Tc
= 25°C
3.0
4.0
Collector-emitter saturation voltage
VCE (sat)
IC = 600 A,
VGE = 15 V
Tc
= 125°C
3.6
V
Input capacitance
Cies
VCE = 10 V, VGE = 0, f = 1 MHz
51200
pF
Turn-on delay time
td (on)
0.12
Rise time
tr
0.18
Turn-on time
ton
0.30
Turn-off delay time
td (off)
0.80
Fall time
tf
0.10
0.15
Switching time
Turn-off time
toff
Inductive load
VCC = 600 V, IC = 600 A
VGE = ±15 V, RG = 2
0.90
s
Forward voltage
VF
IF = 600 A, VGE = 0
2.4
3.0
V
Reverse recovery time
trr
IF = 600 A, VGE = 10 V
di/dt
= 1000 A/s
0.25
s
Transistor stage
0.023
Thermal resistance
Rth (j-c)
Diode stage
0.05
°C/W
Turn-on
Eon
60
Switching loss
Turn-off
Eoff
Inductive load
VCC = 600 V, IC = 600 A
VGE = ±15 V, RG = 2
Tc
= 125°C
60
mJ
Note: Switching time measurement circuit and input/output waveforms
IC
RG
L
IF
VGE
VCC
VCE
VGE
IC
0
90%
10%
90%
td (off)
toff
tf
tr
td (on)
ton
10%
trr
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| MG600Q2YS60A | 功能描述:IGBT MOD CMPCT 1200V 600A RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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