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参数资料
| 型号： | MG600Q1US65H |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 600 A, 1200 V, N-CHANNEL IGBT |
| 封装： | 2-109F1A, 4 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 195K |
| 代理商： | MG600Q1US65H |
MG600Q1US65H
2003-12-19
4
S
w
itc
hin
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Switc
hi
n
gti
me
(
s)
Collector current IC (A)
Switching time – IC
Switc
h
in
g
tim
e
(
s)
Collector current IC (A)
Switching time – IC
Switc
h
in
g
tim
e
(
s)
Gate resistance RG ()
Switching time – RG
Switc
h
in
g
tim
e
(
s)
Gate resistance RG ()
Switching time – RG
Collector current IC (A)
Switching loss – IC
Gate resistance RG ()
Switching loss – RG
S
w
itc
hin
g
los
s
(
m
J)
0.01
10
0.1
1
100
1000
: Tc
= 25°C
: Tc
= 125°C
ton
td (on)
tr
Common emitter
VCC = 600 V
VGE = ±15 V
Rg
= 2.0
0.01
0.1
10
1000
100
1
: Tc
= 25°C
: Tc
= 125°C
toff
td (off)
tf
Common emitter
VCC = 600 V
VGE = ±15 V
Rg
= 2.0
0.01
1
0.1
1
10
100
: Tc
= 25°C
: Tc
= 125°C
ton
td (on)
tr
Common emitter
VCC = 600 V
IC = 600 A
VGE = ±15 V
0.1
1
10
100
: Tc
= 25°C
: Tc
= 125°C
Common emitter
VCC = 600 V
IC = 600 A
VGE = ±15 V
toff
td (off)
tf
1
10
100
1000
: Tc
= 25°C
: Tc
= 125°C
Eon
Common emitter
VCC = 600 V
VGE = ±15 V
RG = 2.0
Eoff
Edsw
1
10
1000
1
100
10
100
: Tc
= 25°C
: Tc
= 125°C
Common emitter
VCC = 600 V
IC = 600 A
VGE = ±15 V
Eon
Eoff
Edsw
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MG600Q2YS60A | 功能描述:IGBT MOD CMPCT 1200V 600A RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| MG601 | 制造商:Thomas & Betts 功能描述:GUIDE PIN,ALL PKON SERIES |
| MG61D | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:SOLID STATE INDICATORS ARE ENCAPSULATED IN RECTANGULAR EPOXY PACKAGE |
| MG6330 | 制造商:TT Electronics/ Semelab 功能描述:TRANSAUDIONPN230V15ATO-3P 制造商:TT Electronics/ Semelab 功能描述:TRANS,AUDIO,NPN,230V,15A,TO-3P 制造商:SEMELAB 功能描述:TRANS,AUDIO,NPN,230V,15A,TO-3P; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:230V; Transition Frequency Typ ft:60MHz; Power Dissipation Pd:200W; DC Collector Current:15A; DC Current Gain hFE:70; No. of Pins:3 ;RoHS Compliant: Yes |
| MG6330-R | 制造商:TT Electronics/ Semelab 功能描述:TRANSAUDIONPN260V15ATO-3P 制造商:TT Electronics/ Semelab 功能描述:TRANS,AUDIO,NPN,260V,15A,TO-3P 制造商:SEMELAB 功能描述:TRANS,AUDIO,NPN,260V,15A,TO-3P; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:260V; Transition Frequency Typ ft:60MHz; Power Dissipation Pd:200W; DC Collector Current:15A; DC Current Gain hFE:70; No. of Pins:3 ;RoHS Compliant: Yes |
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