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参数资料
| 型号： | MG800J1US52A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 800 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-7 |
| 文件页数： | 2/7页 |
| 文件大小： | 119K |
| 代理商： | MG800J1US52A |
Dec.2005
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching
time
Forward voltage
Reverse recovery time
Sense
Thermal resistance
IGES
ICES
VGE(off)
VCE(sat)
Cies
td(on)
tr
ton
td(off)
tf
toff
VF
trr
ISES
IC(SEN-START)
VSEN
Rth(j-c)
VGE = ±20V, VCE = 0
VCE = 600V, VGE = 0
IC = 800mA, VCE = 5V
IC = 800A, Tj = 25°C
VCE = 10V, VGE = 0, f = 1MHz
Inductive load
VCC = 300V
IC = 800A
VGE = ±15V
RG = 2
(Note 1)
IF = 800A, VGE = 0
IF = 800A, VGE = –15V, di/dt = 1500A/s
(Note 1)
VSEN – E = 40V, VCE = 0, VGE = 0
VGE = 15V, VSE = 14.8V
(Note 2)
VGE = 15V, IC = 3000A
(Note 2)
Transistor stage
Diode stage
600
±20
40
800
1600
800
1600
2500
150
–40 ~ 125
2500 (AC 1 minute)
2/3
3
TC = 25°C
MITSUBISHI IGBT MODULES
MG800J1US52A
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
MAXIMUM RATINGS (Ta = 25°C)
Symbol
Parameter
Collector-emitter voltage
Gate-emitter voltage
Sense-emitter voltage
Collector
current
Forward
current
Collector power dissipation
Junction temperature
Storage temperature range
Isolation voltage
Screw
torque
Conditions
Unit
Ratings
V
A
W
°C
V
N m
VCES
VGES
VSES
IC
ICP
IF
IFM
PC
Tj
Tstg
Vlsol
—
±500
4.0
8.0
2.7
—
0.3
—
3.0
0.15
200
—
10
0.05
0.1
nA
mA
V
pF
s
V
s
nA
A
V
°C/W
—
7.0
2.1
93000
0.3
0.25
0.55
0.62
0.15
0.77
2.3
0.08
—
5.5
—
1300
—
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Symbol
Parameter
Test conditions
Limits
Min.
Typ.
Max.
Unit
DC
1ms
DC
1ms
Terminal (M4/M6)
Mounting
Turn-on delay time
Rise time
Turn-on time
Turn-off delay time
Fall time
Turn-off time
Sense leakage current
Sense start current
Sense voltage
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MG800J2YS50A | 功能描述:IGBT MOD CMPCT 600V 800A RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| MG80186-6/B | 制造商:Rochester Electronics LLC 功能描述: |
| MG80186-6/BZA | 制造商:Rochester Electronics LLC 功能描述: |
| MG80186-8 | 制造商:Intel 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| MG80186-8/B | 制造商:Rochester Electronics LLC 功能描述: |
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