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参数资料
| 型号： | MG800J1US52A |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 800 A, 600 V, N-CHANNEL IGBT |
| 封装： | MODULE-7 |
| 文件页数： | 6/7页 |
| 文件大小： | 119K |
| 代理商： | MG800J1US52A |
Dec.2005
MITSUBISHI IGBT MODULES
MG800J1US52A
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
104
2
3
5
7
103
2
3
5
7
102
2
3
5
7
101
08
12
16
4
104
103
2
3
5
7
2
3
5
7
2
3
5
7
102
101
0
400
600
800
200
103
100
101
102
08
12
16
4
102
7
5
3
2
7
5
3
2
101
100
0
400
600
800
200
103
7
5
3
2
7
5
3
2
102
101
010
15
20
5
103
7
5
3
2
7
5
3
2
102
101
0
400
600
800
200
7
5
3
2
7
5
3
2
7
5
3
2
Tj = 25
°C
Tj = 125
°C
Common emitter
VCC = 300V
IC = 800A
VGE =
±15V
Tj = 25
°C
Tj = 125
°C
Common emitter
VCC = 300V
RG = 2
VGE =
±15V
td(off)
toff
td(on)
tf
ton
tr
toff
td(off)
ton
td(on)
tr
tf
Tj = 25
°C
Tj = 125
°C
Common emitter
VCC = 300V
IC = 800A
VGE =
±15V
Eoff
Eon
Tj = 25
°C
Tj = 125
°C
Common emitter
VCC = 300V
RG = 2
VGE =
±15V
Eon
Eoff
Tj = 25
°C
Tj = 125
°C
Common emitter
VCC = 300V
IC = 800A
VGE =
±15V
Irr
trr
Tj = 25
°C
Tj = 125
°C
Common emitter
VCC = 300V
RG = 2
VGE =
±15V
Irr
trr
SW time - RG
SWITCHING
TIME
(ns)
GATE RESISTANCE RG (
)
SW time - IC
SWITCHING
TIME
(ns)
COLLECTOR CURRENT IC (A)
SW loss - RG
SWITCHING
LOSS
E
on
,E
off
(mJ)
GATE RESISTANCE RG (
)
SW loss - IC
SWITCHING
LOSS
E
on
,E
off
(mJ)
COLLECTOR CURRENT IC (A)
Irr, trr - RG
PEAK
REVERSE
RECOVERY
CURRENT
I
rr
(A)
REVERSE
RECOVERY
TIME
t
rr
(ns)
GATE RESISTANCE RG (
)
Irr, trr - IF
PEAK
REVERSE
RECOVERY
CURRENT
I
rr
(A)
REVERSE
RECOVERY
TIME
t
rr
(ns)
FORWARD CURRENT IF (A)
相关PDF资料 |
PDF描述 |
|---|---|
| MG800J2YS50A | 800 A, 600 V, N-CHANNEL IGBT |
| MG800J2YS50A | 800 A, 600 V, N-CHANNEL IGBT |
| MG8N6ES42 | 8 A, 1000 V, N-CHANNEL IGBT |
| MG50J6ES45 | 50 A, 600 V, N-CHANNEL IGBT |
| MG15N6ES42 | 15 A, 1000 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MG800J2YS50A | 功能描述:IGBT MOD CMPCT 600V 800A RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| MG80186-6/B | 制造商:Rochester Electronics LLC 功能描述: |
| MG80186-6/BZA | 制造商:Rochester Electronics LLC 功能描述: |
| MG80186-8 | 制造商:Intel 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| MG80186-8/B | 制造商:Rochester Electronics LLC 功能描述: |
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