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参数资料
| 型号： | MGFS45V2123 |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 25K |
| 代理商： | MGFS45V2123 |
MITSUBISHI
ELECTRIC
MITSUBISHI SEMICONDUCTOR <GaAs FET>
2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
P1dB,GLP vs. Freq.
Frequency (GHz)
41
42
43
44
45
46
2.05
2.10
2.15
2.20
2.25
2.30
2.35
12
13
14
15
16
17
P1dB
GLP
VDS=10V
IDS=6.5A
Po,
ηadd vs. Pin
20
25
30
35
40
45
50
15
20
25
30
35
40
Input power Pin (dBm)
10
20
30
40
50
60
70
VDS=10V
IDS=6.5A
f=2.2GHz
Po
ηadd
Po,IM3 vs. Pin
28
30
32
34
36
38
40
15
17
19
21
23
25
27
29
Input power Pin (dBm S.C.L.)
-60
-50
-40
-30
-20
-10
0
VDS=10V
IDS=6.5A
f1=2.300GHz
f2=2.305GHz
Po
IM3
2.00
2.05
2.10
2.15
2.20
2.25
2.30
2.35
2.40
0.31
0.26
0.27
0.31
0.35
0.37
0.38
0.36
0.32
-34
-77
-120
-153
-178
161
143
126
107
4.76
4.96
5.02
4.99
4.88
4.79
4.69
4.62
4.56
148
129
109
90
73
56
39
22
5
0.031
0.032
0.035
0.034
0.035
0.036
0.037
123
99
76
53
31
17
-4
-22
-39
0.39
0.34
0.30
0.28
0.29
0.30
0.33
0.36
0.40
17
-2
-26
-51
-72
-92
-109
-123
-134
f
(GHz)
S-Parameter (TYP.)
S11
Magn.
Angle(deg)
Magn.
Angle(deg)
Magn.
Angle(deg)
Magn.
Angle(deg)
S21
S12
S22
S Parameters ( Tc=25C, VDS=10V, IDS=6.5A )
TYPICAL CHARACTERISTICS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFS45V2123A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET |
| MGFS45V2123A_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFS45V2123A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.1-2.3 GHz BAND / 32W |
| MGFS45V2325 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET |
| MGFS45V2325A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET |
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