- 您现在的位置：买卖IC网 > PDF目录95933 > MGP15N35CLG (ON SEMICONDUCTOR) 15 A, 380 V, N-CHANNEL IGBT, TO-220AB PDF资料下载
参数资料
| 型号： | MGP15N35CLG |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 15 A, 380 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 250K |
| 代理商： | MGP15N35CLG |
MGP15N35CL, MGB15N35CL
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
ON CHARACTERISTICS (continued) (Note 3)
CollectortoEmitter OnVoltage
VCE(on)
IC = 6.0 A,
VGE = 4.0 V
TJ = 25°C
1.0
1.3
1.6
VDC
TJ = 150°C
0.9
1.2
1.5
TJ = 40°C
1.1
1.4
1.7*
IC = 10 A,
VGE = 4.0 V
TJ = 25°C
1.3
1.6
1.9
TJ = 150°C
1.2
1.5
1.8
TJ = 40°C
1.3
1.6
1.9*
IC = 15 A,
VGE = 4.0 V
TJ = 25°C
1.6
1.95
2.25
TJ = 150°C
1.7
2.0
2.3*
TJ = 40°C
1.6
1.9
2.2
IC = 20 A,
VGE = 4.0 V
TJ = 25°C
1.9
2.2
2.5
TJ = 150°C
2.1
2.4
2.7*
TJ = 40°C
1.85
2.15
2.45
IC = 25 A,
VGE = 4.0 V
TJ = 25°C
2.1
2.5
2.9
TJ = 150°C
2.5
2.9
3.3*
TJ = 40°C
2.0
2.4
2.8
CollectortoEmitter OnVoltage
VCE(on)
IC = 10 A, VGE = 4.5 V
TJ = 150°C
1.5
1.8
VDC
Forward Transconductance
gfs
VCE = 5.0 V, IC = 6.0 A
TJ = 40°C to
150°C
8.0
15
25
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VCC = 25 V, VGE = 0 V
f = 1.0 MHz
TJ = 40°C to
150°C
1000
1300
pF
Output Capacitance
COSS
100
130
Transfer Capacitance
CRSS
5.0
8.0
SWITCHING CHARACTERISTICS (Note 3)
TurnOff Delay Time (Inductive)
td(off)
VCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, L = 300 μH
TJ = 25°C
4.0
10
μSec
TJ = 150°C
4.5
10
Fall Time (Inductive)
tf
VCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, L = 300 μH
TJ = 25°C
7.0
10
TJ = 150°C
10
15*
TurnOff Delay Time (Resistive)
td(off)
VCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 46 Ω,
TJ = 25°C
4.0
10
μSec
TJ = 150°C
4.5
10
Fall Time (Resistive)
tf
VCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 46 Ω,
TJ = 25°C
13
20
TJ = 150°C
16
20
TurnOn Delay Time
td(on)
VCC = 10 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 1.5 Ω
TJ = 25°C
1.0
1.5
μSec
TJ = 150°C
1.0
1.5
Rise Time
tr
VCC = 10 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 1.5 Ω
TJ = 25°C
4.5
6.0
TJ = 150°C
5.0
6.0
3. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
相关PDF资料 |
PDF描述 |
|---|---|
| MGB15N38CLT4 | 15 A, 350 V, N-CHANNEL IGBT |
| MGC15N43CL | 15 A, 460 V, N-CHANNEL IGBT |
| MGDT100100 | PULSE TRANSFORMER FOR MOSFET GATE DRIVE APPLICATION(S) |
| MGF0805A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0846G | S BAND, GaN, N-CHANNEL, RF POWER, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGP15N38CL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Internally Clamped N-Channel IGBT |
| MGP15N40CL | 功能描述:IGBT 晶体管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| MGP15N40CL_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK |
| MGP15N40CLG | 功能描述:IGBT 晶体管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| MGP15N43CL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Internally Clamped N-Channel IGBT |
发布紧急采购，3分钟左右您将得到回复。