参数资料
型号: MGSF3455VT1
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: 3.5 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: PLASTIC, TSOP-6
文件页数: 23/34页
文件大小: 343K
代理商: MGSF3455VT1
MGSF3455VT1
3–42
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
012
34
0
4
8
12
20
VDS, DRAIN–TO–SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
I D
,DRAIN
CURRENT
(A)
01
23
4
0
4
8
12
I D
,DRAIN
CURRENT
(A)
VGS, GATE–TO–SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
04
8
12
16
20
0
0.06
0.12
0.18
R
DS(on)
,ON–RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (A)
Figure 3. On–Resistance vs. Drain Current
Figure 4. Capacitance
Figure 5. Gate Charge
TJ = –55°C
25
°C
125
°C
16
3 V
5 V
4 V
16
20
56
0.24
0.30
VGS = 4.5 V
R
DS(on)
,ON–RESIST
ANCE
(OHMS)
(NORMALIZED)
–50
0.7
0.85
1.00
1.15
TJ, JUNCTION TEMPERATURE (°C)
–25
0
25
50
75
100
150
VGS = 10 V
ID = 3.5 A
1.30
125
VGS = 10, 9, 8, 7 V
VGS = 10 V
Figure 6. On–Resistance vs. Junction Temperature
612
18
VDS – DRAIN–TO–SOURCE VOLTAGE (V)
C,
CAP
ACIT
ANCE
(pF)
Ciss
Coss
Crss
24
30
V
GS
,GA
TE–T
O–SOURCE
VOL
TAGE
(V)
0
Qg, TOTAL GATE CHARGE (nC)
1.5
3.0
4.5
6.0
VDS = 15 V
ID = 3.5 A
0
10
8
6
4
2
0
20
100
180
260
340
420
500
580
6 V
7
1.45
1.60
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