参数资料
型号: MGSF3455VT1
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: 3.5 A, 30 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: PLASTIC, TSOP-6
文件页数: 29/34页
文件大小: 343K
代理商: MGSF3455VT1
MGSF3455VT1
3–43
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 7. Source–Drain Diode Forward Voltage
Figure 8. On–Resistance vs. Gate–to–Source Voltage
Figure 9. Threshold Voltage
NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
IMPEDANCE
Square Wave Pulse Duration (sec)
2
0.1
0.01
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
Figure 10. Single Pulse Power
Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient
TJ, TEMPERATURE (°C)
25
50
75
100
125
ID = 250 A
150
–0.3
0.60
0.45
0.30
0.15
0.0
–0.15
0
VSD, SOURCE–TO–DRAIN VOLTAGE (V)
I S
,SOURCE
CURRENT
(A)
1
10
20
TJ = 150°C
0
0.25
0.50
0.75
1.00
1.25
1.5
1.75
02
4
6
8
10
0
0.08
0.16
0.24
R
DS(on)
,ON–RESIST
ANCE
(OHMS)
VGS – GATE–TO–SOURCE VOLTAGE (V)
0.32
0.40
ID = 3.5 A
0.01
0.10
1.00
10.00
0
6
12
18
POWER
(W)
TIME (sec)
24
30
TJ = 25°C
–25
–50
V
,V
ARIANCE
(V)
GS(th)
1
0.2
Duty Cycle = 0.5
0.05
SINGLE PULSE
0.1
0.02
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
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