参数资料
型号: MIC2124YMM
厂商: Micrel Inc
文件页数: 11/24页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM CM 10-MSOP
产品培训模块: MIC2124 Synchronous Current Mode DC-DC Buck Controller
标准包装: 100
系列: Hyper Speed Control™
PWM 型: 电流模式
输出数: 1
频率 - 最大: 360kHz
占空比: 93%
电源电压: 3 V ~ 5.5 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 85°C
封装/外壳: 10-TFSOP,10-MSOP(0.118",3.00mm 宽)
包装: 管件
其它名称: 576-3639-5
MIC2124YMM-ND
Micrel, Inc.
MOSFET Gate Drive
The MIC2124 high-side drive circuit is designed to
switch an N-Channel MOSFET. The typical application
circuit shows a bootstrap circuit, consisting of a Schottky
diode D1 and 0.1 μ F boostrap capacitor C BST , as shown
in the typical application schematic on Page 1. This
circuit supplies energy to the high-side drive circuit.
Capacitor C BST is charged while the low-side MOSFET is
on and the voltage on the LX pin is approximately 0V.
When the high-side MOSFET driver is turned on, energy
from C BST is used to turn the MOSFET on. As the high-
side MOSFET turns on, the voltage on the LX pin
increases to approximately V HSD . Diode D1 is reversed
biased and C BST floats high while continuing to keep the
high-side MOSFET on. The bias current of the high-side
driver is less than 10mA so a 0.1 μ F to 1 μ F is sufficient to
MIC2124
hold the gate voltage with minimal droop for the power
stroke (high-side switching) cycle, i.e., Δ BST = 10mA x
3.33 μ s/0.1 μ F = 333mV. When the low-side MOSFET is
turned back on, C BST is recharged through D1. A small
resistor R G , which is in series with C BST , can be used to
slow down the turn-on time of the high-side N-Channel
MOSFET.
The drive voltage is derived from the supply voltage V IN .
The nominal low-side gate drive voltage is V IN and the
nominal high-side gate drive voltage is approximately
V IN - V DIODE , where V DIODE is the voltage drop across D1.
A dead-time of approximate 30ns between the high-side
and low-side driver transitions is used to prevent current
from simultaneously flowing unimpeded through both
MOSFETs.
June 2010
11
M9999-060810-D
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