参数资料
型号: MIC2155YML TR
厂商: Micrel Inc
文件页数: 26/35页
文件大小: 0K
描述: IC REG CTRLR BUCK PWM VM 32MLF
特色产品: MIC2155/6 Buck Control IC
标准包装: 1
PWM 型: 电压模式
输出数: 1
频率 - 最大: 550kHz
占空比: 80%
电源电压: 4.5 V ~ 14.5 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 125°C
封装/外壳: 32-VFQFN 裸露焊盘,32-MLF?
包装: 标准包装
产品目录页面: 1091 (CN2011-ZH PDF)
其它名称: 576-3527-6
Micrel, Inc.
For the low-side switch, the DC power dissipation is:
I
P SWITCH 2 ( DC ) = R DSON 2 × ( SW 2 ( rms ) ) 2
The switching loss for each of the high-side MOSFETs
is:
P AC = V IN × I SW ( peak ) × T t × f S
The total power dissipation for each MOSFET is:
P FET _ total = P SWITCH 1 ( DC ) + P AC
External Schottky Diode
A freewheeling diode in parallel with the low-side FET is
needed to keep the inductor current flow continuous
while both MOSFETs are turned off (dead time). Dead
time is necessary to prevent current from flowing
unimpeded through both MOSFETs. An external
Schottky diode is not necessary for circuit operation
since the low-side MOSFET contains a parasitic body
diode. An external diode will improve efficiency due to its
lower forward voltage drop as compared to the internal
parasitic diode in the FET. It may also decrease high
frequency noise because the schottky diode junction
does not suffer from reverse recovery.
If the MOSFET body diode is used, it must be rated to
handle the peak and average current. The body diode
may have a relatively slow reverse recovery time and a
relatively high forward voltage drop. The power lost in
the diode is proportional to the forward voltage drop of
the diode. As the high-side MOSFET starts to turn on,
the body diode becomes a short circuit for the reverse
recovery period, dissipating additional power. The diode
recovery and the circuit inductance will cause ringing
during the high-side MOSFET turn on. If the internal FET
diode is used, power dissipated during the dead time
MIC2155/2156
This power dissipation is calculated below:
I D ( ave ) = I OUT × 2 × t d × f S
Where:
t d is the dead time when both MOSFETs are off.
The reverse voltage requirement of the diode is:
V DIODE _ RRM = V IN
The power dissipated by the diode is:
P DIODE = I D _ AVE × V F
Where:
V F is the forward voltage at the peak diode current.
Snubber Design
A snubber is used to damp out high frequency ringing
caused by parasitic inductance and capacitance in the
buck converter circuit. A snubber is needed for each of
the two phases in the converter. Figure 22 shows a
simplified schematic of one of the buck converter
phases. Stray capacitance consists mostly of the two
MOSFET’s output capacitance (C OSS ). The stray
inductance is mostly package and etch inductance. The
arrows show the resonant current path when the high
side MOSFET turns on. This ringing causes stress on
the semiconductors in the circuit as well as increased
EMI.
C OSS1
should be added to the P DISS of the low-side MOSFET.
An external Schottky diode conducts at a lower forward
voltage preventing the body diode in the MOSFET from
turning on. The lower forward voltage drop dissipates
+
L STRAY1
C IN
Q1
L STRAY2
L
L STRAY3
less power than the body diode. The lack of a reverse
recovery mechanism in a Schottky diode causes is less
ringing and power loss. Depending on the circuit
components and operating conditions, an external
V DC
Sync_buck
Controller
Q2
C OSS2
C OUT
Schottky diode may give a ?% to 1% improvement in
efficiency.
L STRAY4
Figure 22. Output Parasitics
November 2009
26
M9999-111209-B
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