- 您现在的位置：买卖IC网 > PDF目录17157 > MIC4101YM (Micrel Inc)IC MOSFET DVR HALF BRIDGE 8-SOIC PDF资料下载
参数资料
| 型号： | MIC4101YM |
| 厂商： | Micrel Inc |
| 文件页数： | 11/18页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR HALF BRIDGE 8-SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 31ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 118V |
| 电源电压： | 9 V ~ 16 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1109 (CN2011-ZH PDF) |
| 其它名称： | 576-3508-5 MIC4101YM-ND |
Micrel, Inc.
Vdd
MIC4100/1
synchronous buck converter shown in Figure 5, the HS pin
is at ground potential while the low-side MOSFET is on.
The internal diode allows capacitor C B to charge up to
Vdd-Vd during this time (where Vd is the forward voltage
drop of the internal diode). After the low-side MOSFET is
turned off and the HO pin turns on, the voltage across
LO
External
FET
capacitor C B is applied to the gate of the upper external
MOSFET. As the upper MOSFET turns on, voltage on the
HS pin rises with the source of the high-side MOSFET until
it reaches Vin. As the HS and HB pin rise, the internal
diode is reverse biased preventing capacitor C B from
discharging.
Vin
C B
C VDD
Vdd
HB
Q1
Vss
HI
Level
shift
HO
Lout
Vout
HS
Q2
Cout
Figure 3
High-Side Driver and Bootstrap Circuit
A block diagram of the high-side driver and bootstrap
circuit is shown in Figure 4. This driver is designed to drive
a floating N-channel MOSFET, whose source terminal is
referenced to the HS pin.
Vdd
HB
External
C B
FET
HO
HS
Figure 4
A low power, high speed, level shifting circuit isolates the
low side (VSS pin) referenced circuitry from the high-side
(HS pin) referenced driver. Power to the high-side driver
and UVLO circuit is supplied by the bootstrap circuit while
the voltage level of the HS pin is shifted high.
The bootstrap circuit consists of an internal diode and
external capacitor, C B . In a typical application, such as the
March 2006
11
LI
Vss
LO
Figure 5
M9999-031506
相关PDF资料 |
PDF描述 |
|---|---|
| AIRD-03-152K | INDUCTOR PWR DRUM CORE 1500UH |
| LM4040D30QDBZTG4 | IC VREF SHUNT PREC 3V SOT-23-3 |
| EBC13DRYH-S13 | CONN EDGECARD 26POS .100 EXTEND |
| EMM06DTAI-S189 | CONN EDGECARD 12POS R/A .156 SLD |
| LM4040D30QDBZT | IC VREF SHUNT PREC 3V SOT-23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC4101YM TR | 功能描述:功率驱动器IC 100V HalfBridge MOSFET Driver 2A SOURCE/SINK CURRENT TTL INPUT (Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4102 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:100V Half Bridge MOSFET Driver with Anti-Shoot Through Protection |
| MIC4102_11 | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:100V Half Bridge MOSFET Driver with Anti-Shoot Through Protection PRELIMINARY SPECIFICATIONS |
| MIC4102BM | 功能描述:IC DRIVER MOSFET 100V TTL 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC4102BM TR | 功能描述:IC DRIVER MOSFET 100V 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
发布紧急采购，3分钟左右您将得到回复。