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| 型号： | MIC4101YM |
| 厂商： | Micrel Inc |
| 文件页数： | 14/18页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR HALF BRIDGE 8-SOIC |
| 标准包装： | 95 |
| 配置： | 半桥 |
| 输入类型： | 非反相 |
| 延迟时间： | 31ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 118V |
| 电源电压： | 9 V ~ 16 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1109 (CN2011-ZH PDF) |
| 其它名称： | 576-3508-5 MIC4101YM-ND |
Micrel, Inc.
E dirver = Qg × V gs
and
P driver = Qg × V gs × fs
where
E driver is the energy dissipated per switching cycle
P driver is the power dissipated by switching the MOSFET on and off
Qg is the total gate charge at Vgs
Vgs is the gate to source voltage on the MOSFET
fs is the switching frequency of the gate drive circuit
The power dissipated inside the MIC4100/1 is equal to the
ratio of Ron & Roff to the external resistive losses in Rg
and Rg_fet. Letting Ron =Roff, the power dissipated in the
MIC4100 due to driving the external MOSFET is:
MIC4100/1
consideration in a high performance power supply. The
MIC4100 is designed no t only to minimize propagation
delay but to minimize the mismatch in delay between the
high-side and low-side drivers.
Fast propagation delay between the input and output drive
waveform is desirable. It improves overcurrent protection
by decreasing the response time between the control
signal and the MOSFET gate drive. Minimizing
propagation delay also minimizes phase shift errors in
power supplies with wide bandwidth control loops.
Many power supply topologies use two switching
MOSFETs operating 180o out of phase from each other.
These MOSFETs must not be on at the same tim e or a
short circuit will occur, causing high peak currents and
higher power dissipation in the MOSFETs. The MIC4100
Pdiss drive = P driver
Ron
Ron + Rg + Rg _ fet
and MIC4101 output gate drivers are not designed with
anti-shoot-through protection circuitry. The output drives
signals simply follow the inputs. The power supply design
must include timing delays (dead-time) between the input
Supply Current Power Dissipation
Power is dissipated in the MIC4100 even if is there i s
nothing being driven. The supply current is drawn by the
bias for the internal circuitry, the level shifting circuitry and
shoot-through current in the output drivers. The supply
current is proportional to operating frequency and the Vdd
and Vhb voltages. The typical characteristic graphs show
how supply current varies with switching frequency and
supply voltage.
The power diss ipated by the MIC4100 due to supply
current is
Pdiss sup ply = Vdd × Idd + Vhb × Ihb
Total power dissipation and Thermal Considerations
Total power dissipation in the MIC4100 or MIC4101 i s
equal to the power dissipation caused by driving the
external MOSFETs, the supply current and the internal
bootstrap diode.
Pdiss total = Pdiss sup ply + Pdiss drive + Pdiode total
The die temperature may be calculated once the total
power dissipation is known.
T J = T A + Pdiss total × θ JA
where :
T A is the maximum ambient te mperature
T J is the junction t emperature ( ° C)
Pdiss total is the power dissipatio n of the MIC4100/1
θ JC is the thermal resistance from junction t o ambient air ( ° C/W)
Propagation Delay and Delay Matching and other
Timing Considerations
Propagation delay and signal timing is an important
signals to prevent shoot-through. The MIC4100 &
MIC4101 drivers specify delay matching between the two
drivers to help improve power supply performance by
reducing the amount of dead-time required between the
input signals.
Care must be taken to insure the input signal pulse width
is greater than the minimum specified pulse width. An
input signal tha t is less than the minimum pulse width may
result in no output pulse or an output pulse whose width is
significantly less than the input.
The maximum duty cycle (ratio of high side on-time to
switching period) is controlled by the minimum pulse width
of the low side and by the t ime required for the C B
capacitor to charge during the off-time. Adequate time
must be allowed for the C B capacitor to charge up before
the high-side driver is turned on.
Decoupling and Bootstrap Capacitor Selection
Decoupling capacitors are requir ed for both the low side
(Vdd) and high side (HB) supply pins. These capacitors
supply the charge necessary to drive the external
MOSFETs as well as minimize the voltage ripple on these
pins. The capacitor from HB to HS serves double duty by
providing decoupling for the high-side circuitry as well as
providing current to the high-side circuit while the high-side
external MOSFET is on. Ceramic capacitors are
recommended because of their low impedance and small
size. Z5U type ceramic capacitor dielectrics are not
recommended due to the large change in capacitance over
temperature and voltage. A minimum value of 0.1uf is
required for each of the capacitors, regardless of the
MOSFETs being driven. Larger MOSFETs may require
larger capacitance values for proper operation. The
voltage rating of the capacitors depends on the supply
voltage, ambient temperature and the voltage derating
used for reliability. 25V rated X5R or X7R ceramic
March 2006
14
M9999-031506
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MIC4101YM TR | 功能描述:功率驱动器IC 100V HalfBridge MOSFET Driver 2A SOURCE/SINK CURRENT TTL INPUT (Lead Free) RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MIC4102 | 制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:100V Half Bridge MOSFET Driver with Anti-Shoot Through Protection |
| MIC4102_11 | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:100V Half Bridge MOSFET Driver with Anti-Shoot Through Protection PRELIMINARY SPECIFICATIONS |
| MIC4102BM | 功能描述:IC DRIVER MOSFET 100V TTL 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| MIC4102BM TR | 功能描述:IC DRIVER MOSFET 100V 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
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