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参数资料
| 型号： | MITB15WB1200TMH |
| 厂商： | IXYS |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MODULE IGBT CBI |
| 标准包装： | 20 |
| IGBT 类型： | 沟道 |
| 配置： | 三相反相器，带制动器 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 2.2V @ 15V，15A |
| 电流 - 集电极 (Ic)（最大）： | 29A |
| 电流 - 集电极截止（最大）： | 600µA |
| Vce 时的输入电容 (Cies)： | 1.1nF @ 25V |
| 功率 - 最大： | 100W |
| 输入： | 三相桥式整流器 |
| NTC 热敏电阻： | 是 |
| 安装类型： | 底座安装 |
| 封装/外壳： | MiniPack2 |
| 供应商设备封装： | 迷你型Pack2 |
MITB15WB1200TMH
Ouput Inverter T1 - T6
Ratings
Symbol
V CES
V GES
V GEM
I C25
I C80
P tot
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
Conditions
continuous
transient
T VJ = 150°C
T C = 25°C
T C = 80°C
T C = 25°C
min.
typ.
max.
1200
±20
±30
29
20
100
Unit
V
V
V
A
A
W
V CE(sat)
collector emitter saturation voltage
I C = 15 A; V GE = 15 V
T VJ = 25°C
T VJ = 125°C
1.7
2.0
2.2
V
V
V GE(th)
I CES
gate emitter threshold voltage
collector emitter leakage current
I C = 0.5 mA; V GE = V CE
V CE = V CES ; V GE = 0 V
T VJ = 25°C
T VJ = 25°C
T VJ = 125°C
5
5.5
0.8
6.5
0.6
V
mA
mA
I GES
C ies
Q G(on)
gate emitter leakage current
input capacitance
total gate charge
V GE = ±20 V
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 600 V; V GE = 15 V; I C = 15 A
1100
92
150
nA
pF
nC
t d(on)
t r
t d(off)
t f
E on
E off
t d(on)
t r
t d(off)
t f
E on
E off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V CE = 600 V; I C = 15 A
V GE = ±15 V; R G = 75 W
inductive load
V CE = 600 V; I C = 15 A
V GE = ±15 V; R G = 75 W
T VJ = 25°C
T VJ = 125°C
55
30
320
200
1.2
1.3
60
35
360
340
2
1.7
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
RBSOA
I SC
(SCSOA)
reverse bias safe operating area
short circuit safe operating area
V GE = ±15 V; R G = 75 W ; I C = 30 A; T VJ = 125°C
V CE = 720 V; V GE = ±15 V; T VJ = 125°C
R G = 75 W ; t p = 10 μs; non-repetitive
V CEK < V CES -L S · d I /dt
68
V
A
R thJC
R thCH
thermal resistance junction to case
thermal resistance case to heatsink
(per IGBT)
0.4
1.2
K/W
K/W
Output Inverter D1 - D6
Ratings
Symbol
V RRM
I F25
I F80
V F
Q rr
I RM
t rr
E rec
R thJC
R thCH
Definitions
max. repetitve reverse voltage
forward current
forward voltage
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
I F = 15 A; V GE = 0 V
V R = 600 V
di F /dt = -420 A/μs
I F = 15 A; V GE = 0 V
(per diode)
T VJ = 150°C
T C = 25°C
T C = 80°C
T VJ = 25°C
T VJ = 125°C
T VJ = 125°C
min.
typ.
2.3
1.9
2.3
19.6
330
0.68
0.55
max.
1200
24
16
2.7
1.6
Unit
V
A
A
V
V
μC
A
ns
mJ
K/W
K/W
T C = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
? 2010 IXYS All rights reserved
20100906a
2-8
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