参数资料
型号: MITB15WB1200TMH
厂商: IXYS
文件页数: 7/8页
文件大小: 0K
描述: MODULE IGBT CBI
标准包装: 20
IGBT 类型: 沟道
配置: 三相反相器,带制动器
电压 - 集电极发射极击穿(最大): 1200V
Vge, Ic时的最大Vce(开): 2.2V @ 15V,15A
电流 - 集电极 (Ic)(最大): 29A
电流 - 集电极截止(最大): 600µA
Vce 时的输入电容 (Cies): 1.1nF @ 25V
功率 - 最大: 100W
输入: 三相桥式整流器
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: MiniPack2
供应商设备封装: 迷你型Pack2
MITB15WB1200TMH
17
6
16
15
14
13
12
11
Ic = 15A
Vce = 600V
5
4
Eon
Eoff
Erec
Vce = 600V
Vge = +/-15V
Rg = 75 W
Tvj = 125°C
10
9
8
7
6
5
4
3
2
1
0
3
2
1
0
0
10
20
30
40
50
60
70
80
90 100 110 120
0
5
10
15
20
25
30
Qg [nC]
Typical turn on gate charge
Ic, If [A]
Typical switching energy versus collector current
9
30
600
8
Eon
Eoff
Erec
25
560 W
If = 15A
Vce = 600V
Vge = +/-15V
Tvj = 125°C
550
7
6
Ic, If = 15A
Vce = 600V
Vge = +/-15V
20
270 W
75 W
500
5
Tvj = 125°C
15
Irr
trr
450
4
270 W
3
10
400
560 W
2
1
0
5
0
75 W
350
300
0
100
200
300
400
500
600
100
150
200
250
300
350
400
450
Rg [ W ]
Typical switching energy versus gate resistance
IXYS reserves the right to change limits, test conditions and dimensions.
? 2010 IXYS All rights reserved
dif/dt [A/μs]
Typical turn-off characteristics of free wheeling diode
20100906a
7-8
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