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参数资料
| 型号： | MJD200 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| 封装： | TO-252, DPAK-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 48K |
| 代理商： | MJD200 |
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
10
89.3
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VCEO(sus)
Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 10 mA
25
V
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 40 V
TJ = 125
oC
0.1
A
IEBO
Emitter Cut-off Current
(IC = 0)
VBE = 8 V
0.1
A
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 500 mA
IB = 50 mA
IC = 2 A
IB = 200 mA
IC = 5 A
IB = 1 A
0.3
0.75
1.8
V
VBE(sat)
Base-Emitter
Saturation Voltage
IC = 5 A
IB = 1 A
2.5
V
VBE(on)
Base-Emitter On
Voltage
IC = 2 A
VCE = 1 V
1.6
V
fT
Transition Frequency
IC = 100 mA
VCE = 10 V
f = 10 MHz
65
MHz
hFE
DC Current Gain
IC = 500 mA
VCE = 1 V
IC = 2 A
VCE = 1 V
IC = 5 A
VCE = 2 V
70
45
10
180
Pulsed: Pulse duration = 300 s, duty cycle ≤ 2 %
For PNP type voltage and current values are negative.
MJD200 / MJD210
2/4
相关PDF资料 |
PDF描述 |
|---|---|
| MJD210T4 | 5 A, 25 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| MJD2955 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| MJD3055T4 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252AA |
| MJD3055 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| MJD2955T4 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD200_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Plastic Power Transistors |
| MJD200_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Plastic Power Transistors |
| MJD200-1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS |
| MJD200G | 功能描述:两极晶体管 - BJT 5A 25V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD200G | 制造商:ON Semiconductor 功能描述:RF BIPOLAR TRANSISTOR |
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