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参数资料
| 型号： | MJD210-1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, CASE 369-07, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 112K |
| 代理商： | MJD210-1 |
MJD200 MJD210
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient*
RθJC
RθJA
10
89.3
_C/W
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 10 mAdc, IB = 0)
VCEO(sus)
25
—
Vdc
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0, TJ = 125_C)
ICBO
—
100
nAdc
Emitter Cutoff Current (VBE = 8 Vdc, IC = 0)
IEBO
—
100
nAdc
ON CHARACTERISTICS
DC Current Gain (2)
(IC = 500 mAdc, VCE = 1 Vdc)
(IC = 2 Adc, VCE = 1 Vdc)
(IC = 5 Adc, VCE = 2 Vdc)
hFE
70
45
10
—
180
—
—
Collector–Emitter Saturation Voltage (2)
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 2 Adc, IB = 200 mAdc)
(IC = 5 Adc, IB = 1 Adc)
VCE(sat)
—
0.3
0.75
1.8
Vdc
Base–Emitter Saturation Voltage (1) (IC = 5 Adc, IB = 1 Adc)
VBE(sat)
—
2.5
Vdc
Base–Emitter On Voltage (1) (IC = 2 Adc, VCE = 1 Vdc)
VBE(on)
—
1.6
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (3)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
fT
65
—
MHz
Output Capacitance
MJD200
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJD210
Cob
—
80
120
pF
*When surface mounted on minimum pad sizes recommended.
(continued)
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle [ 2%.
(2) Pulse Test: Pulse Width = 300
s, Duty Cycle [ 2%.
(3) fT = hfe ftest.
相关PDF资料 |
PDF描述 |
|---|---|
| MJD200-1 | 5 A, 25 V, NPN, Si, POWER TRANSISTOR |
| MJD210I | 5 A, 25 V, PNP, Si, POWER TRANSISTOR |
| MJD2955-I | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
| MJD29C-1 | 1 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD29-1 | 1 A, 40 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD210G | 功能描述:两极晶体管 - BJT 5A 25V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD210G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MJD210G-TM3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210G-TN3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
| MJD210G-TN3-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS |
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