参数资料
型号: MJD210-1
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 5 A, 25 V, PNP, Si, POWER TRANSISTOR
封装: PLASTIC, CASE 369-07, 3 PIN
文件页数: 3/8页
文件大小: 112K
代理商: MJD210-1
MJD200 MJD210
http://onsemi.com
3
25
Figure 1. Power Derating
T, TEMPERATURE (°C)
0
50
75
100
125
150
15
10
TC
5
20
P D
,POWER
DISSIP
ATION
(W
ATTS)
Figure 2. Switching Time Test Circuit
10K
IC, COLLECTOR CURRENT (AMPS)
10
5K
3K
2K
1K
500
300
200
100
50
1K
IC, COLLECTOR CURRENT (AMPS)
VCC = 30 V
IC/IB = 10
TJ = 25°C
t,TIME
(ns)
500
300
200
100
50
td
30
20
10
5
2.5
0
1.5
1
TA
0.5
2
1
0.01
0.03 0.05
0.5
0.2
0.02
0.1
0.3
10
Figure 3. Turn–On Time
Figure 4. Turn–Off Time
+11 V
25 s
0
-9 V
RB
-4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
51
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
TC
TA (SURFACE MOUNT)
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
FOR PNP TEST CIRCUIT,
REVERSE ALL POLARITIES
t,TIME
(ns)
3
2
5
2
13
tr
MJD200
MJD210
30
20
0.01
0.03 0.05
0.5
0.2
0.02
0.1
0.3
10
5
2
13
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
tf
MJD200
MJD210
相关PDF资料
PDF描述
MJD200-1 5 A, 25 V, NPN, Si, POWER TRANSISTOR
MJD210I 5 A, 25 V, PNP, Si, POWER TRANSISTOR
MJD2955-I 10 A, 60 V, PNP, Si, POWER TRANSISTOR
MJD29C-1 1 A, 100 V, NPN, Si, POWER TRANSISTOR
MJD29-1 1 A, 40 V, NPN, Si, POWER TRANSISTOR
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