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参数资料
| 型号： | MJD30-I |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 封装： | IPAK-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 44K |
| 代理商： | MJD30-I |
2001 Fairchild Semiconductor Corporation
MJD30/
30C
Rev. A2, June 2001
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Turn On Time
Figure 3. Turn Off Time
Figure 4. Safe Operating Area
Figure 5. Power Derating
-0.01
-0.1
-1
-10
1
10
100
1000
VCE = 2V
h
FE
,DC
C
URRE
NT
G
A
IN
IC[A], COLLECTOR CURRENT
-0.01
-0.1
-1
-10
0.01
0.1
1
10
tR, VCC= - 10V
tR, VCC= - 30V
tD , VBE(off)=2V
IC=10IB
t R
,t
D
[
s]
,T
UR
N
O
N
T
IM
E
IC[A], COLLECTOR CURRENT
-0.01
-0.1
-1
-10
0.01
0.1
1
10
tF, VCC= - 10V
tSTG
tF, VCC= - 30V
IC=10IB
t F
,t
ST
G
[
s
],
T
U
R
N
OFF
TI
ME
IC[A], COLLECTOR CURRENT
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
-100
MJD3
0
C
MJD3
0
50
0s
10
0s
1m
s
DC
I C
[A
],
CO
L
ECT
O
R
CU
RREN
T
VCE[V], COLLECTOR-EMITTER VOLTAGE
0
25
50
75
100
125
150
175
0
5
10
15
20
P
C
[W
],
P
O
W
E
R
D
IS
S
IP
A
T
IO
N
TC[
o
C], CASE TEMPERATURE
相关PDF资料 |
PDF描述 |
|---|---|
| MJD31C-TP | 3 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD31CT4-A | 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| MJD31TF | 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-252 |
| MJD32-I | 3 A, 40 V, PNP, Si, POWER TRANSISTOR |
| MJD32C-I | 3 A, 100 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD30TF | 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD31 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD31_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD31_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD31-1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS |
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