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参数资料
| 型号： | MJD31C-1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, CASE 369D-01, DPAK-3 |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 代理商： | MJD31C-1 |
Semiconductor Components Industries, LLC, 2005
June, 2005 Rev. 6
1
Publication Order Number:
MJD31/D
MJD31, MJD31C (NPN),
MJD32, MJD32C (PNP)
MJD31C and MJD32C are Preferred Devices
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Epoxy Meets UL 94, V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C
u 400 V
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
CollectorEmitter Voltage
MJD31, MJD32
MJD31C, MJD32C
VCEO
40
100
Vdc
CollectorBase Voltage
MJD31, MJD32
MJD31C, MJD32C
VCB
40
100
Vdc
EmitterBase Voltage
VEB
5
Vdc
Collector Current Continuous
Peak
IC
3
5
Adc
Base Current
IB
1
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
15
0.12
W
W/
°C
Total Power Dissipation @ TA = 25°C
Derate above 25
°C
PD
1.56
0.012
W
W/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to
+ 150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
RqJC
8.3
°C/W
Thermal Resistance, JunctiontoAmbient*
RqJA
80
°C/W
Lead Temperature for Soldering Purposes
TL
260
°C
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
DPAK3
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING
DIAGRAMS
Y
= Year
WW
= Work Week
xx
= 1, 1C, 2, or 2C
G
= PbFree Package
1 2
3
4
YWW
J3xxG
1
2
3
4
YWW
J3xxG
http://onsemi.com
相关PDF资料 |
PDF描述 |
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| MJD32C-1 | 3 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD31CI | 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-251 |
| MJD31C-I | 3 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD31I | 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-251 |
| MJD32C-TP | 3 A, 100 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD31C-13 | 功能描述:两极晶体管 - BJT 100V 5A NPN SMT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD31C1G | 功能描述:两极晶体管 - BJT 3A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD31C1G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 100V IPAK-4 |
| MJD31CEITU | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| MJD31CG | 功能描述:两极晶体管 - BJT 3A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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