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参数资料
| 型号： | MJD31C-1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封装： | PLASTIC, CASE 369D-01, DPAK-3 |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 代理商： | MJD31C-1 |
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
MJD31, MJD32
MJD31C, MJD32C
VCEO(sus)
40
100
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
MJD31, MJD32
(VCE = 60 Vdc, IB = 0)
MJD31C, MJD32C
ICEO
50
mAdc
Collector Cutoff Current
(VCE = Rated VCEO, VEB = 0)
ICES
20
mAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
1
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1 Adc, VCE = 4 Vdc)
(IC = 3 Adc, VCE = 4 Vdc)
hFE
25
10
50
CollectorEmitter Saturation Voltage
(IC = 3 Adc, IB = 375 mAdc)
VCE(sat)
1.2
Vdc
BaseEmitter On Voltage
(IC = 3 Adc, VCE = 4 Vdc)
VBE(on)
1.8
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)
fT
3
MHz
SmallSignal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
20
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2%.
2. fT = hfe ftest.
相关PDF资料 |
PDF描述 |
|---|---|
| MJD32C-1 | 3 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD31CI | 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-251 |
| MJD31C-I | 3 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD31I | 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-251 |
| MJD32C-TP | 3 A, 100 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD31C-13 | 功能描述:两极晶体管 - BJT 100V 5A NPN SMT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD31C1G | 功能描述:两极晶体管 - BJT 3A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD31C1G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 100V IPAK-4 |
| MJD31CEITU | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| MJD31CG | 功能描述:两极晶体管 - BJT 3A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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