参数资料
型号: MJD32-1
厂商: ON SEMICONDUCTOR
元件分类: 功率晶体管
英文描述: 3 A, 40 V, PNP, Si, POWER TRANSISTOR
封装: PLASTIC, CASE 369-07, 3 PIN
文件页数: 21/61页
文件大小: 394K
代理商: MJD32-1
Outline Dimensions and Leadform Options
5–6
Motorola Bipolar Power Transistor Device Data
Leadform Options — TO–220 (Case 221A)
Leadform options require assignment of a special part number before ordering.
Contact your local Motorola representative for special part number and pricing.
10,000 piece minimum quantity orders are required.
Leadform orders are non–cancellable after processing.
Leadforms apply to both Motorola Case 221A–04 and 221A–06 except as noted.
LEADFORM BC
LEADFORM AS
.100 REF.
.20 REF.
.125
± .010
0.100 TYP.
MOUNTING
SURFACE
0.750 MAX.
.736
± .010
.620
± .015
.950 MIN.
1.00 MIN.
LEADFORM AJ
CASE
221A–04
221A–06
A
0.360
± 0.010
.100 REF.
.200 REF.
.050 REF.
.06R
.017
± .004
Lead Not Trimmed
0.300 Min.
.580
± .010
.765
± .01
A
LEADFORM AU
CASE
221A–04
221A–06
A
0.920 Min.
0.885 Min.
LEADFORM 3 LEADS
.190
± .020
.095 REF.
.574
± .01
A
相关PDF资料
PDF描述
MJE13005BU 4 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE13005BD 4 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE13005AN 4 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE13005AJ 4 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE13005AF 4 A, 400 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
MJD32B 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS
MJD32BT4 功能描述:两极晶体管 - BJT PNP Gen Pur Switch RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJD32BTF 功能描述:两极晶体管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJD32C 功能描述:两极晶体管 - BJT 3A 100V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MJD32C1 功能描述:两极晶体管 - BJT 3A 100V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2