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参数资料
| 型号： | MJD32TF |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封装： | DPAK-3 |
| 文件页数： | 2/9页 |
| 文件大小： | 109K |
| 代理商： | MJD32TF |
2001 Fairchild Semiconductor Corporation
MJD32/
32C
Rev. A2, June 2001
Typical Characteristics
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Capacitance
Figure 4. Turn On Time
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
-0.01
-0.1
-1
-10
1
10
100
1000
VCE = -2V
h
FE
,DC
C
URRENT
GAI
N
IC[A], COLLECTOR CURRENT
-1E-3
-0.01
-0.1
-1
-10
-0.01
-0.1
-1
-10
I
C = 10 IB
V
CE(sat)
V
BE(sat)
V
BE
(s
a
t),
V
CE
(s
at)
[V
],
S
A
T
URA
T
ION
V
O
LT
A
G
E
I
C[A], COLLECTOR CURRENT
-0.1
-1
-10
-100
1
10
100
1000
C
ob
[p
F]
,CAPACI
T
ANCE
VCB[V], COLLECTOR-BASE VOLTAGE
-0.01
-0.1
-1
-10
0.1
1
tR, VCC=-30V
tR, VCC=-10V
IC = 10.IB
tD, VBE(off)=-2V
t R
,t
D
[
s
],
T
U
RN
O
N
T
IME
IC[A], COLLECTOR CURRENT
-0.01
-0.1
-1
-10
0.1
1
tSTG
tF, VCC=-30V
IC = 10.IB
tF, VCC(off)=-10V
t F
,t
ST
G
[
s
],
TU
R
N
O
FF
TI
ME
IC[A], COLLECTOR CURRENT
-1
-10
-100
-1000
-0.01
-0.1
-1
-10
32
100
s
500
s
32
C
1m
s
DC
I
CP
(max)
I
C
(max)
I C
[A],
COL
L
ECT
O
R
CURRENT
V
CE[V], COLLECTOR-EMITTER VOLTAGE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD340 | 功能描述:两极晶体管 - BJT 0.5A 300V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD340_03 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJD340_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Voltage Power Transistors |
| MJD340-1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS |
| MJD340-13 | 功能描述:两极晶体管 - BJT HIGH VOLTAGE NPN SMT RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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