- 您现在的位置：买卖IC网 > PDF目录182422 > MJD360T4-A (STMICROELECTRONICS) 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252AA PDF资料下载
参数资料
| 型号： | MJD360T4-A |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252AA |
| 封装： | ROHS COMPLIANT, TO-252, DPAK-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 代理商： | MJD360T4-A |
Electrical ratings
MJD360T4-A, MJD361T4-A
2/7
Doc ID 16126 Rev 1
1
Electrical ratings
Note:
For PNP types voltage and current values are negative.
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCBO
Collector-base voltage (IE = 0)
60
V
VCEO
Collector-emitter voltage (IB = 0)
60
V
VEBO
Emitter-base voltage (IC = 0)
5
V
IC
Collector current
3
A
ICM
Collector peak current
5
A
IB
Base current
1
A
PTOT
Total dissipation at Tc = 25 °C
15
W
Tstg
Storage temperature
-65 to 150
°C
TJ
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max.
8.3
°C/W
相关PDF资料 |
PDF描述 |
|---|---|
| MJD361T4-A | 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
| MJD41CI | 6 A, 100 V, NPN, Si, POWER TRANSISTOR |
| MJD42C-1 | 6 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJD44E3-1 | 10 A, 80 V, NPN, Si, POWER TRANSISTOR |
| MJD44H11T4-A | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MJD361T4-A | 功能描述:两极晶体管 - BJT LV Complimentary 60V Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MJD41C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD41C_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD41C_11 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Power Transistors |
| MJD41C-1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS |
发布紧急采购，3分钟左右您将得到回复。